Datasheet sum110n03-03p Datasheet

N-Channel 30-V (D-S) 175_C MOSFET

Conti

t (TJ = 175_C)

I

A

b

C/W

PRODUCT SUMMARY

V

(BR)DSS

(V) r

30

TO-263

0.0026 @ VGS = 10 V 110

0.004 @ VGS = 4.5 V 110

(W) I

DS(on)

SUM110N03-03P

Vishay Siliconix

FEATURES

D TrenchFETr Power MOSFET

a

(A)

D

a

D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier D 100% R

Tested

g

APPLICATIONS

D Desktop or Server CPU Core

D

DRAIN connected to TAB

SDG

Top View

Ordering Information: SUM110N03-03P

SUM110N03-03P-E3 (Lead Free)

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

=

nuous Drain Curren

Pulsed Drain Current I

Avalanche Current I

Repetitive Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

b

TC = 25_C (TO-220AB and TO-263)

TC = 25_C

TC = 100_C

L = 0.1 mH E

TA = 25_C (TO-263)

d

P

DS

GS

D

DM

AR

D

stg

30

"20

110

400

65

211 mJ

375

3.75

−55 to 175 _C

V

a

c

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

Junction-to-Case R

Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material).

Document Number: 71964 S-32523—Rev. B, 08-Dec-03

PCB Mount (TO-263)

Free Air (TO-220AB)

d

R

thJA

thJC

40

62.5

0.4

_C/W

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SUM110N03-03P

V

g

DSS

m

DS

,

GS

,

D

VDD = 15 V, RL = 0.18 W

F

m

Vishay Siliconix

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

(BR)DSS

GS(th)

GSS

VDS = 0 V, I

VDS = VGS, I

VDS = 0 V, VGS = "20 V

VDS = 30 V, VGS = 0 V 1

Zero Gate Voltage Drain Current I

DSS

VDS = 30 V, VGS = 0 V, TJ = 125_C 50

VDS = 30 V, VGS = 0 V, TJ = 175_C 250

On-State Drain Current

a

I

D(on)

VDS w 5 V, VGS = 10 V 120 A

VGS = 10 V, ID = 30 A 0.002 0.0026

Drain-Source On-State Resistance

a

r

DS(on)

VGS = 10 V, ID = 30 A, TJ = 125_C 0.004

VGS = 10 V, ID = 30 A, TJ = 175_C 0.005

VGS = 4.5 V, ID = 20 A

Forward Transconductance

Dynamic

b

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance R

Turn-On Delay Time

Rise Time

b

Turn-Off Delay Time

b

Fall Time

a

b

g

Q

t

d(on)

t

d(off)

iss

oss

rss

t

fs

VDS = 15 V, ID = 30 A 20 S

VGS = 0 V, VDS = 25 V, f = 1 MHz

g

V

gs

gd

g

r

f

= 15 V, VGS = 10 V, ID = 110 A

DS

VDD = 15 V, RL = 0.18 W

ID ^ 110 A, V

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

= 250 mA 30

D

= 250 mA 1 2 3

D

0.3 1.3 1.9 W

= 10 V, Rg = 2.5 W

GEN

c

"100 nA

0.0031 0.004

12100

1910 pF

1250

172 250

40

22

20 35

90 140

25 40

mA

W

nC

ns

Continuous Current I

Pulsed Current I

Forward Voltage

a

Reverse Recovery Time t

Peak Reverse Recovery Current I

Reverse Recovery Charge Q

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing.

S

SM

V

SD

rr

RM

rr

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2

IF = 110 A, V

GS

= 0 V

IF = 85 A, di/dt = 100 A/ms

85

440

1.1 1.5 V

60 120 ns

3.5 5 A

0.1 0.3 mC

Document Number: 71964

S-32523—Rev. B, 08-Dec-03

A

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

250

200

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

SUM110N03-03P

Vishay Siliconix

200

160

150

100

− Drain Current (A)I

D

50

0

0246810

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

250

200

150

100

− Transconductance (S)g

fs

50

TC = −55_C

4 V

3 V

25_C

125_C

− Drain Current (A)I

D

W )

− On-Resistance (r

DS(on)

120

80

TC = 125_C

40

0

012345

0.0060

0.0045

0.0030

0.0015

25_C

VGS = 4.5 V

−55_C

VGS = 10 V

0

0 102030405060708090

15000

12000

9000

6000

C − Capacitance (pF)

3000

C

rss

0

0 6 12 18 24 30

V

DS

Document Number: 71964 S-32523—Rev. B, 08-Dec-03

0.0000 0 20 40 60 80 100 120

ID − Drain Current (A)

Capacitance Gate Charge

C

iss

C

oss

− Drain-to-Source Voltage (V)

− Gate-to-Source Voltage (V)

GS

V

10

VDS = 15 V

8

I

= 85 A

D

6

4

2

0

0 30 60 90 120 150 180

− Drain Current (A)

I

D

Qg − Total Gate Charge (nC)

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SUM110N03-03P

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

2.0

V

= 10 V

GS

I

= 30 A

D

1.6

W)

100

1.2

0.8

(Normalized)

− On-Resistance (r

DS(on)

0.4

0.0

−50 −25 0 25 50 75 100 125 150 175

TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)

(V)V

(BR)DSS

T

= 150_C

10

− Source Current (A)I

S

1

0

J

T

= 25_C

J

0.3 0.6 0.9 1.2

Drain Source Breakdown vs.

Junction Temperature

40

38

ID = 10 mA

36

34

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4

32

30

−50 −25 0 25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

Document Number: 71964

S-32523—Rev. B, 08-Dec-03

THERMAL RATINGS

Maximum Avalanche and Drain Current

vs. Case Temperature

120

100

80

1000

100

Limited

by r

Safe Operating Area

DS(on)

SUM110N03-03P

Vishay Siliconix

10 ms 100 ms

1 ms

60

40

− Drain Current (A)I

D

20

0

0 25 50 75 100 125 150 175

2

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

TC − Ambient Temperature (_C)

0.05

0.02

Single Pulse

10

− Drain Current (A)I

D

1

0.1

0.1 1 10 100

TC = 25_C

Single Pulse

VDS − Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

10 ms 100 ms dc

0.01

−4

10

Document Number: 71964 S-32523—Rev. B, 08-Dec-03

−3

10

−2

10

Square Wave Pulse Duration (sec)

−1

10

1

10

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