Datasheet sud40n10 Datasheet

N-Channel 100-V (D-S) 175 °C MOSFET

T

SUD40N10-25

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

100

DS(on)

0.025 at V

0.028 at V

GS

(Ω)I

= 10 V

= 4.5 V

D

(A)

40

38

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Maximum Junction Temperature

• 100 % R

Tested

g

Available

RoHS*

COMPLIANT

T O-252

D

Drain Connected to T a b

S GD

T op V i e w

Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free)

G

S

N-Channel MOSFE

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

b

TC = 25 °C

T

= 125 °C

C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH

= 25 °C

T

Maximum Power Dissipation

C

= 25 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

100

± 20

40

23

70

40

80 mJ

b

136

3

a

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Junction-to-Ambient

a

t ≤ 10 s

Steady State

Junction-to-Case

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71140 S-81732-Rev. E, 04-Aug-08

R

thJA

R

thJC

15 18

40 50

0.85 1.1

°C/W

www.vishay.com

1

SUD40N10-25

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

c

Turn-Off Delay Time

Fall Time

c

b

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Pulsed Current

Diode Forward Voltage

b

Source-Drain Reverse Recovery Time

I

SM

V

SD

t

rr

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 100 V, V

DS

V

= 100 V, V

DS

V

= 100 V, V

DS

= 5 V, V

DS

V

= 10 V, ID = 40 A

GS

V

= 10 V, ID = 40 A, TJ = 125 °C

GS

V

= 10 V, ID = 40 A, TJ = 175 °C

GS

V

= 4.5 V, ID = 20 A

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

VDS = 15 V, ID = 40 A

VGS = 0 V, V

VDS = 50 V, V

V

DD

≅ 40 A, V

I

D

IF = 40 A, V

= 25 V, F = 1 MHz

DS

= 10 V, ID = 40 A

GS

= 50 V, RL = 1.25 Ω

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 40 A, dI/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

100

1.0 3.0

± 100 nA

1

50

250

70 A

0.02 0.025

0.05

0.063

0.022 0.028

70 S

2400

290

120

40 60

11

9

13.5Ω

813

40 60

15 25

80 120

70 A

1.0 1.5 V

75 120 ns

V

µA

Ω

pFOutput Capacitance

nC

ns

www.vishay.com 2

Document Number: 71140

S-81732-Rev. E, 04-Aug-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

SUD40N10-25

Vishay Siliconix

160

VGS = 10 thru 6 V

120

80

- Drain Current (A)I

D

40

0

0246810

VDS- Drain-to-Source Voltage (V)

5 V

Output Characteristics

100

TC = - 55 °C

80

60

25 °C

125 °C

4 V

3 V

100

80

60

40

- D r a i n C urrent (A)I

D

20

0

012345

VGS- Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

-55 °C

Transfer Characteristics

0.05

0.04

0.03 V

= 4.5 V

GS

40

Transconductance (S)g

-

fs

20

0

0 102030405060

- Drain Current (A)

I

D

Transconductance

4000

3000

C

iss

2000

C - Capacitance (pF)

1000

C

rss

0

0 20406080100

VDS- Drain-to-Source Voltage (V)

C

oss

Capacitance

0.02

- On-Resistance (Ω)

DS(on)

R

0.01

0.00

16

12

- Gate-to-Source Voltage (V)

GS

V

= 10 V

GS

0 2 04 06 08 0 100

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

V DS = 50 V I

= 40 A

D

8

4

0

0 2 04 06 080

Qg- Total Gate Charge (nC)

Gate Charge

Document Number: 71140 S-81732-Rev. E, 04-Aug-08

www.vishay.com

3

SUD40N10-25

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

3.0

VGS= 10 V

I

= 40 A

D

2.5

2.0

1.5

- On-Resistance (Normalized)

1.0

DS(on)

R

0.5

Source Current (A)I

-

S

100

T

= 175 °C

J

10

TJ= 25 °C

0.0

- 50 - 25 0 25 50 75 100 125 150 175

TJ- J unction Temperature ( )°C

On-Resistance vs. Junction Temperature

THERMAL RATINGS

50

40

30

20

Drain Current (A)

-

D

I

10

0

0 25 50 75 100 125 150 175

TC- Case Temperature (°C)

Maximum Avalanche Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

1

0

0.3 0.6 0.9 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

100

DS(on)

10 µs

100 µs

1 ms

10 ms

100 ms 1 s, DC

100

is specified

00010111.0

Limited by R

10

- Drain Current (A)I

D

1

0.1

* V

DS(on)*

TC = 25 °C

Single Pulse

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

Safe Operating Area

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

0.02

0.05

Single Pulse

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

10

1

10 30

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71140.

www.vishay.com 4

Document Number: 71140

S-81732-Rev. E, 04-Aug-08

TO-252AA CASE OUTLINE

Package Information

Vishay Siliconix

E

b2

L2

D

L1

L3

b

e1

E1

b1

e

D1

A

C1

H

L

C

A2

A1

gage plane height (0.5 mm)

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 2.21 2.38 0.087 0.094

A1 0.89 1.14 0.035 0.045

A2 0.030 0.127 0.001 0.005

b 0.71 0.88 0.028 0.035

b1 0.76 1.14 0.030 0.045

b2 5.23 5.44 0.206 0.214

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.10 4.45 0.161 0.175

E 6.48 6.73 0.255 0.265

E1 4.49 5.50 0.177 0.217

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.65 10.41 0.380 0.410

L 1.40 1.78 0.055 0.070

L1 0.64 1.02 0.025 0.040

L2 0.89 1.27 0.035 0.050

L3 1.15 1.52 0.040 0.060

ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347

Note

• Dimension L3 is for reference only.

Document Number: 71197 www.vishay.com 18-Apr-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243 (6.180)

Return to Index

0.420 (10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1