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STY60NK30Z
N-CHANNEL 300V - 0.033Ω - 60A Max247
Zener-Protected Su perMESH™Power MOSFET
TYPE V
STY60NK30Z 300 V < 0.045 Ω 60 A 450 W
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
DSS
(on) = 0.033 Ω
DS
R
DS(on)
I
D
Pw
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down,specialcareis taken to ensure a very good dv/dt capability for the
most dem anding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH EFFICIENCY
SWITCHING DC/DC CONVETERS FOR
PLASMA TV’s
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STY60NK30Z Y60NK30Z Max247 TUBE
1/8February 2004
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STY60NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
T
j
T
stg
() Pulse width limited by safe operating area
≤60A, di/dt ≤200A/µs,VDD≤ V
(1) I
SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.28 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
300 V
300 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
60 A
37.5 A
Drain Current (pulsed) 240 A
Total Dissipation at TC= 25°C
450 W
Derating Factor 3.57 W/°C
Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) 6000 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
≤ T
JMAX.
-55 to 150 °C
Maximum Lead Temperature For Soldering Purpose 300
°C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C,ID=IAR,VDD=50V)
j
60 A
0.7 J
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD c apability, but also to make them safely absorb possible voltage transients that may oc casionally be
applied from gate to source. In this r es pec t the Zener voltage is appropriat e to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These i ntegrated Zener diodes thus avoid the
usage of external components.
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STY60NK30Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE S PECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 300 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
=MaxRating
DS
=MaxRating,TC= 125 °C
V
DS
V
= ± 20 V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 30 A 0.033 0.045 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15V,ID=30A 29 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 7200
V
DS
1070
250
VGS=0V,VDS= 0V to 240V 880 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=150V,ID=30A
R
=4.7Ω , VGS=10V
G
(Resistive Load see, Figure 3)
=240V,ID=60A,
V
DD
V
=10V
GS
50
90
220
46
123
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
FallTime
VDD=150V,ID=30A
R
=4.7Ω ,VGS=10V
G
150
60
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
FallTime
Cross-over Time
=240V,ID=60A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Loadsee, Figure5)
40
65
110
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=60A,VGS=0
I
SD
V
R
(see test circuit, Figure 5)
=60A,di/dt=100A/µs
= 100 V, Tj=150°C
475
6.4
27
when VDSincreases from 0 to 80%
oss
60
240
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
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STY60NK30Z
Safe Operating Area Thermal Impedance
Transfer CharacteristicsOutput Characteristics
Transconductance
4/8
Static Drain-source On Resistance
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STY60NK30Z
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Theresho ld Voltage vs Temp.
Source-drain Diode Forward Characteristics
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STY60NK30Z
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped I nduc tive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit F or Inductive Load Switching
And Di ode Recovery Times
Fig. 4: Gate Charge test Circuit
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Max247 MECHANICAL DATA
STY60NK30Z
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.70 20.30
e 5.35 5.55
E 15.30 15.90
L 14.20 15.20
L1 3.70 4.30
mm inch
P025Q
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STY60NK30Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of suc h informat ion n or for any in fring ement of paten ts or oth er ri ghts of th ird part ies whic h may resul t from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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