Datasheet STW8NC80Z Datasheet (SGS Thomson Microelectronics)

STW8NC80Z

N-CHANNEL 800V - 1.3 Ω - 6.7A T O-247

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

R

DS(on)

I

D

STW8NC80Z 800 V < 1.5 Ω 6.7 A

n

TYPICAL RDS(on) = 1.3 Ω

n

EXTREMELY HIGH dv /d t C APABILITY GATE­TO-SOURCE ZENER DIODES

n

100% AVALANCHE TESTED

n

VERY LOW INTRINSIC CAPAC ITANCES

n

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications.

APPLICATIONS

n

SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION

n

WELDING EQUIPMENT

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

T

stg

T

j

(•)Pu l se width limited by safe operat i ng area

≤6.7A, di/dt ≤100A/µs, VDD ≤ V

(1)I

SD

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

800 V
800 V

Gate- source Voltage ±25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 27 A
Total Dissipation at TC = 25°C

6.7 A

4.2 A

160 W
Derating Factor 1.28 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

, Tj ≤ T

(BR)DSS

JMAX.

1/8December 2001

STW8NC80Z

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 800 V

6.7 A

275 mJ

Breakdown Voltage

/∆TJBreakdown Voltage Temp.

ID = 1 mA, VGS = 0 0.9 V/°C

Coefficient
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.3 A

V

GS

345V

1.3 1.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 164 pF
Reverse Transfer

Capacitance

ID=3.3 A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

6

2350 pF

17 pF

S

2/8

STW8NC80Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

t

r

Q

Q

gs

Q

gd

g

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge 12 nC
Gate-Drain Charge 15 nC

SWITCHING OFF (INDUCTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 13 ns
Cross-over Time 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 6.7 A

(2)

Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 6 µC
Reverse Recovery Current 18 A

= 400V, ID = 3A

DD

R

= 4.7Ω VGS = 10V

G

(see test circuit, Figure 3)
V

= 640V, ID = 6 A,

DD

VGS = 10V

V

= 640V, ID = 6 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 6 A, VGS = 0
I

= 6 A, di/dt = 100A/µs,

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

33 ns
12 ns
43 58 nC

13 ns

1.6 V

680 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 % .

2. Pulse width li mited by safe operating area .

3. ∆V

= αT (25°-T ) BV

BV

GSO

(25°)

= 20 mA, VGS = 0

D

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s int egrity. These integrated Zener diodes th us avoid the
usage of external components.

3/8

STW8NC80Z

Ther m al Imp e danceSafe Operating Area

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

4/8

STW8NC80Z

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Threshold Volta ge vs Temp. Norma lized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STW8NC80Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW8NC80Z

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

7/8

STW8NC80Z

8/8

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