
STW8NB80
N - CHANNEL 800V - 1.2Ω - 7.5A - TO-247
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STW8NB80 800 V < 1.6 Ω 7.5 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
= 1.2
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
■
HIGH CURRENT, HIGH SPEED SWITCH ING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulse width limited by safe operating area (1) ISD
January 1999
Drain-source Voltage (VGS = 0) 800 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC 7.5 A
D
I
Drain Current (continuous) at Tc = 100 oC 4.7 A
D
800 V
(•) Drain Current (pulsed) 30 A
Total Dissipation at Tc = 25 oC 170 W
tot
Derating Factor 1.36 W/
) Peak Diode Recovery voltage slope 4 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 7.5
A, di/dt
≤ 200 Α/µ
s, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
o
C
1/5

STW8NB80
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive 7.5 A
0.73
30
0.1
300
o
C/W
oC/W
o
C/W
o
C
E
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ELECTRICAL CHARACTERISTICS
= 50 V)
DD
= 25 oC unless otherwise specified)
(T
case
680 mJ
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
800 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold
V
= VGS ID = 250 µA
DS
Voltage
Static Drain-source On
VGS = 10V ID = 3.7 A 1.2 1.6 Ω
Resistance
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
345V
7.5 A
µA
µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
C
iss
C
oss
C
rss
2/5
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 3.7 A 1.5 6.5 S
= 0 1400
GS
180
20
pF
pF
pF

STW8NB80
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on delay Time
t
Rise Time
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 400 V ID = 3.5 A
DD
= 4.7 Ω VGS = 10 V
R
G
V
= 640 V ID = 7.4 A V
DD
= 4.7 Ω V
R
G
GS =
10 V
GS
= 10 V
20
10
40
10
18
52 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 640 V ID = 7A
DD
= 4.7 Ω VGS = 10 V
R
G
15
15
25
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
7.5
30
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 7.5 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 7.5 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
730
5.5
Charge
I
RRM
Reverse Recovery
15
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5

STW8NB80
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
4/5
P025P

STW8NB80
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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