Datasheet STW8NB100 Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 1000V - 1.2Ω - 8A - TO-247

TYPE V

DSS

STW8NB100 1000 V < 1.5 Ω 8 A

■

TYPICAL R

■

EXTREMELY HIGH dv/dt CAPABILITY

■

30V GATE TO SOURCE VOLTAGE RATING

±

■

100% AVALANCHE TESTED

■

LOW INTRINSIC CAPACITANCE

■

GATE CHARGE MINIMIZED

■

REDUCED VOLTAGE SPREAD

DS(on)

= 1.2

R

DS(on)

Ω

STW8NB100

PowerMESH MOSFET

PRELIMINARY DATA

I

D

3

2

1

DESCRIPTION

Using the latest high voltage MESH OVERLAY



TO-247

process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstand­ing performances. The new patent pending st rip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and

INTERNAL SCHEMATIC DIAGRAM

dv/dt capabilities and unrivalled gate charge and
switching characteristics.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCH ING

■

SWITCH MODE POWER SUPPLY (SMPS)

■

DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTA BLE
POWER SUPPLY AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/dt

T

(•) Pulse width limited by safe operating area (1) ISD

March 1999

Drain-source Voltage (VGS = 0) 1000 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC8A

D

I

Drain Current (continuous) at Tc = 100 oC5A

D

1000 V

(•) Drain Current (pulsed) 32 A

Total Dissipation at Tc = 25 oC 190 W

tot

Derating Factor 1.52 W/
Peak Diode Recovery voltage slope 4 V/ns

(1)

Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

≤8 Α,

di/dt ≤ 200 A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

o

C

o

C

o

C

1/5

STW8NB100

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERIST ICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max)

j

DD

= 50 V)

0.66
30

0.1

300

8A

600 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

1000 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125

DS

o

C

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

345V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10 V ID = 4 A 1.2 1.5 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

8A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C
C
C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 4 A 8.9 S

= 0 2900

GS

275

27

µA
µA

pF
pF
pF

2/5

STW8NB100

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Time
Rise Time

t

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 500 V ID = 3.5 A

DD

= 4.7 Ω VGS = 10 V

R

G

V

= 800 V ID = 7 A V

DD

= 10 V 68

GS

32
13

95 nC
16
31

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 800 V ID = 7 A

DD

= 4.7 Ω VGS = 10 V

R

G

32
32
40

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

8

32

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 8 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 8 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

1000

11

Charge

I

RRM

Reverse Recovery

21

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/5

STW8NB100

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

Dia 3.55 3.65 0.140 0.144

mm inch

4/5

P025P

STW8NB100

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without express written ap proval o f STM icroelectronics.

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