Page 1
STW8NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STW8NA60
ST H8NA60FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGE SPREAD
DS(on)
DSS
600 V
600 V
= 0.92 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
R
DS(on)
< 1 Ω
< 1 Ω
I
D
8A
5A
o
C
STH8NA60FI
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
ST W 8N A60 ST H8 NA6 0F I
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1998
Dra in- sour c e Volt age (VGS= 0) 600 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 600 V
DGR
Gat e-source Voltage
GS
I
Dra in Cu rr ent (contin uous ) a t Tc=25oC85A
D
I
Dra in Cu rr ent (contin uous ) a t Tc=100oC5.13.2A
D
30 V
±
(•) Dra in Cu rr ent (pulsed) 32 32 A
Tot al Dissipat ion at Tc=25oC 150 60 W
tot
Der ati ng Fact or 1.2 0.48 W/
Insulation Withstand Voltage (DC) 4000 V
ISO
St orage Temperat ure -65 to 150
stg
T
Max. Operating Junct ion Temperat ure 150
j
o
C
o
C
o
C
1/10
Page 2
STW8NA60-STH8NA60FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Ma x 0.83 2.08
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urpose
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max,δ <1%)
j
30
0.1
300
8A
480 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 600 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 30 V
GS
25
250
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA2.2533.75V
Sta t ic Drain-s our c e On
VGS=10V ID=4A 0.92 1
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
8A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4A 4.5 6.6 S
VDS=25V f=1MHz VGS= 0 1350
175
45
1690
230
60
µA
µA
Ω
pF
pF
pF
2/10
Page 3
STW8NA60-STH8NA60FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID=4A
R
=4.7
G
Ω
VGS=10V
20
35
28
35
(see test circuit, figure 3)
(di/dt)
Tur n-on Current Slope VDD=480V ID=8A
on
R
G
=47
Ω
VGS=10V
200 A/µ s
(see test circuit, figure 5)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 480 V ID=8A VGS=10V 58
9
27
82 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Tim e
c
VDD=640V ID=8A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
16
16
26
23
23
37
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
8
32
(pulsed)
(∗)ForwardOnVoltage ISD=8A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=8A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
600
10
Charge
Reverse Recovery
33
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
SafeOperating Area for TO-247 Safe OperatingArea for ISOWATT218
3/10
Page 4
STW8NA60-STH8NA60FI
ThermalImpedancefor TO-247
DeratingCurve for TO-247
ThermalImpedancefor ISOWATT218
DeratingCurve for ISOWATT218
OutputCharacteristics
4/10
TransferCharacteristics
Page 5
STW8NA60-STH8NA60FI
Transconductance
Gate Charge vs Gate-sourceVoltage
Static Drain-sourceOn Resistance
CapacitanceVariations
NormalizedGate ThresholdVoltage vs
Temperature
NormalizedOn Resistancevs Temperature
5/10
Page 6
STW8NA60-STH8NA60FI
Turn-onCurrentSlope
Cross-overTime
Turn-offDrain-sourceVoltage Slope
SwitchingSafe Operating Area
AccidentalOverloadArea
6/10
Source-drainDiode ForwardCharacteristics
Page 7
STW8NA60-STH8NA60FI
Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes TestCircuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
7/10
Page 8
STW8NA60-STH8NA60FI
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
8/10
P025P
Page 9
ISOWATT218MECHANICAL DATA
STW8NA60-STH8NA60FI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
D
C
L5
M
H
L2
L6
L1
D1
F
U
G
123
L4
P025C
9/10
Page 10
STW8NA60-STH8NA60FI
10/10
Information furnished isbelieved to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
Australia - Brazil -Canada - China - France -Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore -Spain - Sweden - Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A.
The ST logo is a trademark of STMicroelectronics
1998 STMicroelectronics – Printedin Italy – AllRights Reserved
STMicroelectronicsGROUP OF COMPANIES
http://www.st.com
.
Loading...