Page 1
®
STW80N06-10
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V
DSS
STW80N06-10 60 V < 0.010 Ω 80 A
R
DS(on)
I
D
■
TYPICAL R
■
AVALANCHE RUGG ED TECHNOLO GY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100oC
■
HIGH CURRENT CAPABILITY
■
175oC OPERATING TEMPERATURE
■
HIGH dV/dt RUGGEDNESS
■
APPLICATION ORIENTED
DS(on)
= 0.0085
Ω
CHARACTERIZATION
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
POWER MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
■
SYNCRONOUS RECTIFICATION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dV/dt(
T
(•) Pulse width limited by safe operating area
October 1998
Drain-source Voltage (VGS = 0) 60 V
DS
Drain- gate Voltage (RGS = 20 kΩ)60V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC80A
D
I
Drain Current (continuous) at Tc = 100 oC60A
D
(•) Drain Current (pulsed) 320 A
Total Dissipation at Tc = 25 oC180W
tot
Derating Factor 1.2 W/
) Peak Diode Recovery voltage slope 5 V/ns
1
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/5
Page 2
STW80N06-10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
max, δ < 1%)
j
DD
max, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
(T
= 100 oC, pulse width limited by Tj max, δ < 1%)
c
= 25 V)
0.83
62.5
0.5
300
60 A
600 mJ
150 mJ
42 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 60 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
= ± 20 V ± 100 nA
V
GS
10
100
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= VGS ID = 250 µA234V
DS
VGS = 10V ID = 40 A
V
= 10V ID = 40 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.0085 0.01
0.02
80 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 40 A 25 S
= 0 5900
GS
900
230
µA
µA
Ω
Ω
pF
pF
pF
2/5
Page 3
STW80N06-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 30 V ID = 40 A
DD
R
= 4.7 Ω VGS = 10 V
G
(see test circuit, figure 3)
(di/dt)
Turn-on Current Slope V
on
= 48 V ID = 80 A
DD
R
= 50 Ω VGS = 10 V
G
(see test circuit, figure 5)
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
VDD = 40 V ID = 80 A V
= 10 V 230
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 48 V ID = 40 A
DD
R
= 4.7 Ω VGS = 10 V
G
(see test circuit, figure 5)
SOURCE DRAIN DIODE
32
16042200
240 A/µs
280 nC
30
60
35
175
240
46
230
300
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
80
320
(pulsed)
(∗) Forward On Voltage ISD = 80 A VGS = 0 1.5 V
V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
I
= 80 A di/dt = 100 A/µs
SD
V
= 30 V Tj = 150 oC
DD
(see test circuit, figure 5)
125
0.6
Charge
I
RRM
Reverse Recovery
10
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V
(
1
(BR)DSS
, Tj ≤ T
JMAX
A
A
ns
C
µ
A
3/5
Page 4
STW80N06-10
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
4/5
P025P
Page 5
STW80N06-10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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