Datasheet STW7NC90Z Datasheet (SGS Thomson Microelectronics)

STW7NC90Z

N-CHANNEL 900V - 1.55Ω - 6A TO-247

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

STW7NC90Z 900 V < 1.9

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ GATE-TO-SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

(on) = 1.55Ω

DS

R

DS(on)

I

D

Ω

6 A

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns

T

stg

T

j

(•)Pu l se width limite d by safe operat i ng area

≤6A, di/dt ≤100A/µs, VDD ≤ V

(1)I

SD

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

900 V
900 V

Gate- source Voltage ±25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 24 A
Total Dissipation at TC = 25°C

6A

3.8 A

160 W
Derating Factor 1.28 W/°C
Gate-source Current (DC) ±50 mA
Gate source ESD(HBM-C=100pF, R=15K

Ω)

3KV

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(*) Limited by maximum temperature allowed

, Tj ≤ T

(BR)DSS

JMAX.

1/8May 2001

STW7NC90Z

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆

BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 900 V

6A

315 mJ

Breakdown Voltage

/∆TJBreakdown Voltage Temp.

ID = 1 mA, VGS = 0 1 V/°C

Coefficient
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 3A

345V

1.55 1.9

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 150 pF
Reverse Transfer

Capacitance

ID=3A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

5.7 S

2290 pF

15 pF

Ω

2/8

STW7NC90Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge

g

Gate-Source Charge 13 nC
Gate-Drain Charge 15 nC

SWITCHING OFF (INDUCTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 14 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

I

RRM

Source-drain Current 6 A

(2)

Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 7.14 µC

rr

Reverse Recovery Current 21 A

= 450V, ID = 3A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 720V, ID = 6 A,

DD

VGS = 10V

V

= 720V, ID = 6 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 6 A, VGS = 0
I

= 6 A, di/dt = 100A/µs,

SD

VDD = 40 V, Tj = 150°C
(see test circuit, Figure 5)

30 ns

42 58.8 nC

10 ns

1.6 V

680 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

α

T Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating area.

3. ∆

= αT (25°-T) BV

V

BV

GSO

(25°)

= 50 mA

GS

90

10

-4

/°C

Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diode s thus avoi d t he
usage of external components.

3/8

STW7NC90Z

Thermal ImpedanceSafe Operating Area

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductance

4/8

STW7NC90Z

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Volta ge vs Temp. Normalized On Resistance vs Temp eratur e

Source-drain Diode Forward Characteristics

5/8

STW7NC90Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW7NC90Z

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º5º

60º 60º

7/8

STW7NC90Z

8/8

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