Datasheet STW7NC80Z Datasheet (SGS Thomson Microelectronics)

STW7NC80Z

N-CHANNEL 800V - 1.5Ω - 6A TO-2 47

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

STW7NC80Z 800 V < 1.8

■ TYPICAL R

■ EXTREMELY HIGH dv /d t C APABILITY

■ GATE-TO-SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

(on) = 1.5Ω

DS

R

DS(on)

I

D

Ω

6A

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

T

stg

T

j

(•)Pu l se width limited by safe operating area

≤6A, di/dt ≤100A/µs, VDD ≤ V

(1)I

SD

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

800 V
800 V

Gate- source Voltage ±25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 24 A
Total Dissipation at TC = 25°C

6A

3.8 A

160 W
Derating Factor 1.28 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15K

Ω)

3KV

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

, Tj ≤ T

(BR)DSS

JMAX.

1/8July 2000

STW7NC80Z

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆

BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Breakdown Voltage Temp.

/∆T

J

Coefficient
Zero Gate Voltage

Drain Current (V
Gate-body Leakage

Current (V

= 25 °C, ID = IAR, VDD = 50 V)

j

I

D

I

D

V

= 0)

DS

GS

= 0)

V
V

= 250 µA, VGS = 0

= 1 mA, VGS = 0

= Max Rating

DS

= Max Rating, TC = 125 °C

DS

= ±20V

GS

800 V

6A

250 mJ

0.9 V/°C
1µA

50 µA

±10 µA

(1)

ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On State Drain Current

= VGS, ID = 250µA

DS

= 10V, ID = 3A

V

GS

V

> I

D(on)

=10V

x R

DS

V

GS

DS(on)max,

345V

1.5 1.8

6A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

> I

g

(1)

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 125 pF
Reverse Transfer

Capacitance

D(on)

x R

DS(on)max,

V

DS

I

=3A

D

VDS = 25V, f = 1 MHz, VGS = 0

7S

1600 pF

12 pF

Ω

2/8

STW7NC80Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 10 ns
Total Gate Charge

g

Gate-Source Charge 12 nC
Gate-Drain Charge 19 nC

SWITCHING OFF (INDUCTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 13 ns
Cross-over Time 19 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

I

RRM

Source-drain Current 6 A

(2)

Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 8.1 µC

rr

Reverse Recovery Current 19 A

= 400V, ID = 3A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 640V, ID = 6 A,

DD

V

= 10V

GS

VDD = 640V, ID = 6 A,
RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD =6 A, VGS = 0
ISD = 6 A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

26 ns

45 63 nC

11 ns

1.6 V

850 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

α

T Voltage Thermal Coefficient T=25°C Note(3) 1.3

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width li mited by safe operating area.

3. ∆

Gate-Source Breakdown
Voltage

= αT (25°-T) BV

V

BV

GSO

(25°)

Igs=± 1mA (Open Drain) 25 V

10

I

= 50 mA

GS

90

-4

/°C

Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s int egrity. These integrated Zener diode s thus avoid the
usage of external components.

3/8

STW7NC80Z

Ther m al Imp e d anceSafe Operating Area

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductance

4/8

STW7NC80Z

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized On Resistance vs Temperatur eNormalized Gate Threshold Volta ge vs Temp.

Source-drain Diode Forward Characteristics

5/8

STW7NC80Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW7NC80Z

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

7/8

STW7NC80Z

8/8

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