Page 1
STW7NA90
STH7NA90FI
N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218
FAST POWER MOSFET
TYPE V
STW7NA90
ST H7NA90FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
DSS
900 V
900 V
= 1.05 Ω
APPLICATIONS
■ HIGHCURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ CONSUMER ANDINDUSTRIALLIGHTING
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY (UPS)
R
DS(on)
<1.3Ω
<
1.3 Ω
I
D
7A
4.7 A
o
C
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW7NA90 ST H7NA 90FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1998
Dra in- sour c e Volt age (VGS= 0) 900 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 900 V
DGR
Gat e-source Volt age ± 30 V
GS
Dra in Cu rr ent (contin uous ) a t Tc=25oC74.7A
I
D
Dra in Cu rr ent (contin uous ) a t Tc=100oC43A
I
D
(•) Dra in Cu rr ent (pulsed) 30 30 A
Tot al Dissipation at Tc=25oC 190 70 W
tot
Der ati ng Fact or 1.52 0.56 W/
Insulation Withstand Voltage (DC) −−−−−− 40 00 V
ISO
St orage Temperat ure -65 to 150
stg
Max. Operating Junct ion Temperat ure 150
T
j
o
C
o
C
o
C
1/9
Page 2
STW7NA90- STH7NA90FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 0.65 1.78
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure F or S o ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
30
0.1
300
7A
700 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 900 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 30 V
GS
50
500
100 nA
±
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA2.2533.75V
Sta t ic Drain-s our c e On
VGS=10V ID= 3.5 A 1.05 1. 3
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
7A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=3.5A 7 9 S
VDS=25V f=1MHz VGS= 0 3100
310
80
4000
380
105
µA
µA
Ω
pF
pF
pF
2/9
Page 3
STW7NA90 - STH7NA90FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=450V ID=3.5A
R
=4.7
G
Ω
VGS=10V
40
41
54
63
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 720 V ID=7A VGS= 10 V 120
20
60
170 nC
SWITCHING OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Tim e
Fall T ime
f
Cross-over Tim e
c
VDD=720V ID=7A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
50
18
73
65
23
97
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
7
30
(pulsed)
(∗)ForwardOnVoltage ISD=7A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=7A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
830
13.8
Charge
Reverse Recovery
33
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218
3/9
Page 4
STW7NA90- STH7NA90FI
ThermalImpedancefor TO-247
OutputCharacteristics
ThermalImpedancefor ISOWATT218
TransferCharacteristics
Transconductance
4/9
Static Drain-sourceOn Resistance
Page 5
STW7NA90 - STH7NA90FI
Gate Charge vs Gate-sourceVoltage
NormalizedGate ThresholdVoltage vs
Temperature
CapacitanceVariations
NormalizedOn Resistancevs Temperature
Source-drainDiode ForwardCharacteristics
5/9
Page 6
STW7NA90- STH7NA90FI
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes TestCircuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/9
Page 7
TO-247 MECHANICAL DATA
STW7NA90 - STH7NA90FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
P025P
7/9
Page 8
STW7NA90- STH7NA90FI
ISOWATT218MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
D
C
L5
M
H
L2
L6
L1
D1
F
U
G
123
L4
P025C
8/9
Page 9
STW7NA90 - STH7NA90FI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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