Page 1
STW7NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STW7NA80
ST H7NA80FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGE SPREAD
DS(on)
DSS
800 V
800 V
= 1.68 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
R
DS(on)
< 1.9 Ω
< 1.9 Ω
I
D
6.5 A
4A
o
C
STH7NA80FI
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
ST W 7N A80 ST H7 NA8 0F I
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1998
Dra in- sour c e Volt age (VGS= 0) 800 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 800 V
DGR
Gat e-source Voltage
GS
I
Dra in Cu rr ent (contin uous ) a t Tc=25oC6.54A
D
I
Dra in Cu rr ent (contin uous ) a t Tc=100oC42.5A
D
30 V
±
(•) Dra in Cu rr ent (pulsed) 26 26 A
Tot al Dissipat ion at Tc=25oC 150 60 W
tot
Der ati ng Fact or 1.2 0.48 W/
Insulation Withstand Voltage (DC) 4000 V
ISO
St orage Temperat ure -65 to 150
stg
T
Max. Operating Junct ion Temperat ure 150
j
o
C
o
C
o
C
1/10
Page 2
STW7NA80-STH7NA80FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Ma x 0.83 2.08
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urpose
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max,δ <1%)
j
30
0.1
300
6.3 A
320 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 800 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 30 V
GS
25
50
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA2.2533.75V
Sta t ic Drain-s our c e On
VGS=10V ID= 3.5A 1.68 1.9
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
7A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=3.5A 4.5 6.3 S
VDS=25V f=1MHz VGS= 0 1330
160
40
1750
210
55
µA
µA
Ω
pF
pF
pF
2/10
Page 3
STW7NA80-STH7NA80FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=400V ID= 3.5 A
R
G
=47
Ω
VGS=10V
3.5
9.5
45
125
(see test circuit, figure 3)
(di/dt)
Tur n-on Current Slope VDD=640V ID=7A
on
R
G
=47
Ω
VGS=10V
170 A/µ s
(see test circuit, figure 5)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 640 V ID=7A VGS=10V 58
8
27
78 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Tim e
c
VDD=640V ID=6A
=47 Ω VGS=10V
R
G
(see test circuit, figure 5)
90
25
125
120
35
165
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
6.5
26
(pulsed)
(∗)ForwardOnVoltage ISD=7A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=7A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
850
15
Charge
Reverse Recovery
35
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
SafeOperating Area for TO-247 Safe OperatingArea for ISOWATT218
3/10
Page 4
STW7NA80-STH7NA80FI
ThermalImpedancefor TO-247
DeratingCurve for TO-247
ThermalImpedancefor ISOWATT218
DeratingCurve for ISOWATT218
OutputCharacteristics
4/10
TransferCharacteristics
Page 5
STW7NA80-STH7NA80FI
Transconductance
Gate Charge vs Gate-sourceVoltage
Static Drain-sourceOn Resistance
CapacitanceVariations
NormalizedGate ThresholdVoltage vs
Temperature
NormalizedOn Resistancevs Temperature
5/10
Page 6
STW7NA80-STH7NA80FI
Turn-onCurrentSlope
Cross-overTime
Turn-offDrain-sourceVoltage Slope
SwitchingSafe Operating Area
AccidentalOverloadArea
6/10
Source-drainDiode ForwardCharacteristics
Page 7
STW7NA80-STH7NA80FI
Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes TestCircuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
7/10
Page 8
STW7NA80-STH7NA80FI
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
8/10
P025P
Page 9
ISOWATT218MECHANICAL DATA
STW7NA80-STH7NA80FI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
D
C
L5
M
H
L2
L6
L1
D1
F
U
G
123
L4
P025C
9/10
Page 10
STW7NA80-STH7NA80FI
10/10
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