Datasheet STW6NA80, STH6NA80FI Datasheet (SGS Thomson Microelectronics)

STW6NA80



STH6NA80FI

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218

FAST POWER MOS TRANSISTOR

TYPE V

STW6NA80
ST H6 NA80FI

■ TYPICALR

■ AVALANCERUGGED TECHNOLOGY

■ 100%AVALANCHETESTED

■ REPETITIVEAVALANCHEDATA AT 100

■ LOW GATE CHARGE

■ VERYHIGH CURRENTCAPABILITY

■ APPLICATIONORIENTED

DS(on)

DSS

800 V
800 V

= 1.8

CHARACTERIZATION

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

Ω

R

DS(on)

<2.2Ω
<2.2

Ω

I

D

5.4 A

3.4 A

o

C

3

2

1

1

TO-247 ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST W 6N A80 STH 6NA 80FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited by safeoperating area

October 1998

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gat e Voltage (RGS=20kΩ)

DGR

Gate -sourc e Vo ltage ± 30 V

GS

I

Drain Current (co ntinuous) at Tc=25oC5.4

D

I

Drain Current (co ntinuous) at Tc=100oC3.4

D

800 V

(•) Drain Current (pulsed) 22

Total Dissipation at Tc=25oC 150

tot

Derating Factor 1.2
Insulat ion Withstand Vo ltage (DC )  4000 V

ISO

St orage Temperature -65 t o 1 50

stg

T

Max. Op er a t ing J unction Tem pe rat ure 150

j

3.4

2.1
22
60

0.48

W/

A
A
A

W

o
o

o

C

C
C

1/10

STW6NA80-STH6NA80FI

THERMAL DATA

TO-247 ISOWAT T 218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max V al ue Uni t

I

AR

E

E

I

AR

Ther mal Resist ance Junction- case Max 0.83 2.08
Ther mal Resist ance Junction- amb ient Max

Thermal Resistance Case-sink Typ
Maximum Lead Tem perature For Soldering P urpose

l

Avalanche Curr ent, Re petitive or No t -Repetit ive
(pulse width limited by T

Single Pulse Avalanche Energ y

AS

(starting T
Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by T

max, δ <1%)

j

max,δ <1%)

j

Avalanche Curr ent, Re petitive or No t -Repetit ive

= 100oC, pulse widt h limit ed by Tjmax, δ <1%)

(T

c

30

0.1

300

5.4 A

150 mJ

5.8 mJ

3.4 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

800 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- b ody Le akage
Current ( V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRatingx0.8 Tc=100oC

V

DS

= ± 30 V

V

GS

25
50

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250 µA

2.25 3 3.75 V

Voltage

R

DS(on)

I

D(on)

Static Drain-source On
Resistance

VGS=10V ID=3A

=10V ID=3A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on )max

5.4 A

1.8 2.2

4.4

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductance

C

C

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Transf er

rss

Capacitance

VDS>I

D(on)xRDS(on )maxID

=3A 3 5.5 S

VDS=25V f=1MHz VGS= 0 1250

140

35

1700

190

50

µA
µA

Ω
Ω

pF
pF
pF

2/10

STW6NA80-STH6NA80FI

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

t

r

Rise Time

VDD= 400 V ID=3A

=4.7 Ω VGS=10V

R

G

40

10055135

(see test circu it, figure 3)

(di/dt)

Tur n-on Cu rr ent Slope VDD= 640 V ID=6A

on

=47 Ω VGS=10V

R

G

180 A/µs

(see test circu it, figure 5)

Q
Q
Q

Total Gate Charge

g

Gat e- Source Char ge

gs

Gate-Drain Charge

gd

VDD= 640 V ID=6A VGS=10V 55

8

24

75 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off -voltage Rise Ti me
Fall Time

f

Cross-over T i m e

c

VDD= 640 V ID=6A

=47 Ω VGS=10V

R

G

(see test circu it, figure 5)

75
25

110

100

35

150

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Curr ent

(•)

Source-drain Curr ent

5.4
22

(pulsed)

(∗) F orward On Volt age ISD=6A VGS=0 1.6 V

Reverse R ec o v ery

rr

Time
Reverse R ec o v ery

rr

= 6 A di/dt = 100 A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circu it, figure 5)

800

15.2
Charge
Reverse R ec o v ery

38

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218

3/10

STW6NA80-STH6NA80FI

ThermalImpedancefor TO-247

DeratingCurve for TO-247

ThermalImpedancefor ISOWATT218

DeratingCurve for ISOWATT218

OutputCharacteristics

4/10

TransferCharacteristics

STW6NA80-STH6NA80FI

Transconductance

Gate Charge vs Gate-sourceVoltage

Static Drain-sourceOn Resistance

CapacitanceVariations

Normalized Gate ThresholdVoltage vs
Temperature

Normalized On Resistancevs Temperature

5/10

STW6NA80-STH6NA80FI

Turn-onCurrent Slope

Cross-overTime

Turn-offDrain-sourceVoltage Slope

SwitchingSafe Operating Area

AccidentalOverload Area

6/10

Source-drainDiode Forward Characteristics

STW6NA80-STH6NA80FI

Fig. 1:

UnclampedInductive LoadTest Circuit

Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

7/10

STW6NA80-STH6NA80FI

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429
H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

Dia 3.55 3.65 0.140 0.144

mm inch

8/10

P025P

ISOWATT218MECHANICAL DATA

STW6NA80-STH6NA80FI

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441

H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N

E

A

D

C

L5

M

H

L2

L6

L1

D1

F

U

G

123

L4

P025C

9/10

STW6NA80-STH6NA80FI

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