Page 1
STW60NE10
N - CHANNEL 100V - 0.016Ω - 60A TO-247
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W60NE10 100 V <0 . 022 Ω 60 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.016 Ω
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤60 A, di/dt ≤ 200 A/µs, VDD≤ V
June 1999
Dra in- sour c e Vol t age (VGS= 0) 100 V
DS
Dra in- gate Voltage (RGS=20kΩ) 100 V
DGR
Gat e-source Voltage
GS
I
Dra in Current ( continuous) at Tc=25oC60A
D
I
Dra in Current ( continuous) at Tc=100oC42A
D
20 V
±
(•) D rain Cu rr ent ( p uls ed ) 240 A
Tot al Dissipation at Tc=25oC 180 W
tot
Der ati ng Factor 1.2 W/
1) Peak Diode Re c overy v olt age slope 9 V/ns
St orage Tem pe r at ure -65 to 175
stg
T
Max. Operat ing Junct ion Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
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STW60NE10
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value U nit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Tempera tur e For Solder ing Purp ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A valanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max)
j
0.83
30
0.1
300
60 A
500 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A 234V
Sta t ic Drain-sour ce On
VGS=10V ID= 30 A 0.016 0.022
Resistance
I
D(on)
On StateDrain Current VDS>I
D(on)xRDS(on )max
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=18 A 30 S
VDS=25V f=1MHz VGS= 0 5300
640
215
µ
µA
Ω
pF
pF
pF
A
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STW60NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay Time
Rise Time
r
VDD=50V ID=30A
R
=4.7
G
Ω
VGS=10V
28
100
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=80V ID=60A VGS= 10 V 142
27
59
185 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Delay Time
t
Fall T ime
f
VDD=50V ID=30A
=4.7 Ω VGS=10V
R
G
160
45
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise Tim e
Fall T ime
f
Cross-over Time
c
V
=80V ID=60A
clamp
=4.7 Ω VGS=10V
R
G
(Indu ctive Load, see fig. 5)
40
45
85
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Sou rc e-d rai n Cur ren t
(•)
Sou rc e-d rai n Cur ren t
60
240
(pulsed)
(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 60 A di/dt = 100 A /µs
=50V Tj=150oC
V
DD
(s ee tes t cir cu it, fig . 5)
170
1.02
Charge
Reverse Recovery
12
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area Thermal Impedan ce
3/8
Page 4
STW60NE10
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STW60NE10
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
STW60NE10
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
TO-247 MECHANICAL DATA
STW60NE10
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
P025P
7/8
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STW60NE10
Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.
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