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STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W55NE10 100 V <0. 027 Ω 55 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE AT100
■ APPLICATIONORIENTED
DS(on)
= 0.021 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process.The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 55 A, di/dt ≤ 300 A/µs, VDD≤ V
January 1999
Dra in- sour c e Volt age (VGS= 0) 100 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 100 V
DGR
Gat e-source Volt age ± 20 V
GS
I
Dra in Cu rr ent ( c ont inuous) at Tc=25oC55A
D
I
Dra in Cu rr ent ( c ont inuous) at Tc=100oC35A
D
(•) D rain Cu rr ent ( p uls ed ) 220 A
Tot al Dissipation at Tc=25oC 180 W
tot
Der ati ng Fact or 1.2 W/
1) Peak Diode Recovery v olt age sl ope 9 V/ns
St orage Tem pe r at ure -65 to 175
stg
T
Max. Operating J unction Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
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STW55NE10
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature For So ldering Purpos e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.83
30
0.1
300
55 A
350 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Volt age VDS=VGSID= 250 µ A22.64V
Sta t ic Drain-s our c e On
VGS=10V ID= 27 .5 A 0.021 0.027
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
55 A
VGS=10V
DYNAMIC
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=25 A 10 35 S
VDS=25V f=1MHz VGS= 0 4350
500
175
µ
µA
Ω
pF
pF
pF
A
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STW55NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=50V ID=25A
R
G
=4.7
Ω
VGS=10V
25
10034135
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=80V ID=50A VGS= 10 V 123
24
47
165
32
64
SWITCHING OFF
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=80V ID=55A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
45
35
65
60
47
88
SOURCEDRAIN DIODE
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
55
220
(pulsed)
(∗)ForwardOnVoltage ISD=55A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 55 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
155
815
210
1100
Charge
Reverse Recovery
10.5
15
Current
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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STW55NE10
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STW55NE10
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
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Page 6
STW55NE10
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
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Page 7
TO-247 MECHANICAL DATA
STW55NE10
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
P025P
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STW55NE10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change withoutnotice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices orsystems without express written approval ofSTMicroelectronics.
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