Page 1
STW50NB20
N - CHANNEL 200V - 0.047Ω - 50A - TO-247
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W50NB 20 200 V < 0.055 Ω 50 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30VGATETO SOURCEVOLTAGERATING
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
= 0.047 Ω
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
(on) per area, exceptional avalanche and
DS
dv/dt capabilities and unrivalled gate charge and
switchingcharacteristics.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 50 A, di/dt ≤ 200 A/µs, VDD≤ V
October 1999
Drain-source Voltage (VGS=0) 200 V
DS
Drain- gat e Voltage (RGS=20kΩ)
DGR
Gat e-source Voltag e ± 30 V
GS
I
Drain Cur re nt (contin uo us ) at Tc=25oC50A
D
I
Drain Cur re nt (contin uo us ) at Tc= 100oC32A
D
200 V
(•) Drain Current (pulsed) 200 A
Tot al Dissipation at Tc=25oC280W
tot
Dera ti ng F ac tor 2.24 W/
1) Peak Diode Reco very voltage slope 4 V/ ns
Sto rage Temper at ure -65 to 150
stg
T
Max. Operat i ng Junction Temperature 150
j
,Tj≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
Page 2
STW50NB20
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max V alue Uni t
I
AR
E
Ther mal Res is t an c e Junc ti on-case Max
Ther mal Res is t an c e Junc ti on-amb ient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temper at ure For Sold er ing Purp ose
l
Avalanche Curr ent, Repetit iv e or Not -Repet it iv e
(pulse width l imited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.44
30
0.1
300
50 A
1000 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
200 V
Break d own Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curr ent (V
GS
Gat e- b ody Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
1
10
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µ A
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 2 5 A 0.047 0.055
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
50 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr anscond uctance
C
C
C
Input Capacitance
iss
Out put Capacit ance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
= 2 5 A 10 17 S
VDS=25V f=1MHz VGS= 0 3400
900
125
µA
µ
Ω
pF
pF
pF
A
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STW50NB20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD= 100 V ID=25A
R
=4.7
G
Ω
VGS=10V
35
65
(see te st circuit, fi gure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Sour ce Charge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=50A VGS=10V 84
26
44
115 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage Rise T ime
Fall Time
f
Cross-over Time
c
VDD= 160 V ID=50A
=4.7 ΩVGS=10V
R
G
(see te st circuit, fi gure 5)
18
27
50
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperatingarea
Source-drain Current
(•)
Source-drain Current
50 A
(pulsed)
(∗) For ward On Voltage ISD=50A VGS=0 1.5 V
Reverse Recov ery
rr
Time
Reverse Recov ery
rr
= 50 A di/dt = 100 A/µs
I
SD
=50V Tj= 150oC
V
DD
(see te st circuit, fi gure 5)
330
3.5
Charge
Reverse Recov ery
21
Current
ns
ns
nC
nC
ns
ns
ns
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
Page 4
STW50NB20
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STW50NB20
Normalized GateThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistance vs Temperature
5/8
Page 6
STW50NB20
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Page 7
TO-247 MECHANICAL DATA
STW50NB20
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
7/8
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STW50NB20
Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice.This publication supersedes and replaces all information previously supplied. STMicroelectronicsproducts
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The STlogo is a trademark of STMicroelectronics
1999STMicroelectronics – Printedin Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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