Page 1
STW47NM50
N-CHANNEL 500V - 0.065Ω -45ATO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE V
DSS
R
DS(on)Rds(on)*QgID
STW47NM50 500V < 0.085Ω 5.6 Ω*nC 45 A
TYPICAL RDS(on) = 0.065Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yiel ds overall
dynamic performancethat issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is verysuitable forincreasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
January 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 180 A
Total Dissipation at TC= 25°C
45 A
28.4 A
417 W
Derating Factor 2.08 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤45A, di/dt≤400A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/6
Page 2
STW47NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.3 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=35V)
j
20 A
810 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 500 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30 V ±100 nA
GS
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 22.5 A
= 250 µA
345V
0.065 0.085 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 610 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
Capacitance
R
G
1. Pulsed: Pulse duration = 300 µs, duty cycle1.5 %.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias = 0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
D(on)xRDS(on)max,
ID= 22.5A
V
=25V,f=1MHz,VGS=0
DS
VGS=0V,VDS= 0V to 400V 325 pF
Test Signal Level = 20mV
Open Drain
oss
20 S
3700 pF
50 pF
1.7 Ω
when VDSincreases from 0 to 80%
2/6
Page 3
STW47NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 35 ns
Total Gate Charge
g
Gate-Source Charge 23 nC
Gate-Drain Charge 42 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 23 ns
Cross-over Time 44 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulsewidth limited by safe operating area.
Source-drain Current 45 A
(2)
Source-drain Current (pulsed) 180 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 250V, ID= 22.5 A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
= 400 V, ID=45A,
DD
VGS=10V
V
=400V,ID=45A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD=45A,VGS=0
= 40 A, di/dt = 100A/µs,
I
SD
VDD= 100 V, Tj= 25°C
(see test circuit, Figure 5)
= 40 A, di/dt = 100A/µs,
I
SD
V
= 100 V, Tj= 150°C
DD
(see test circuit, Figure 5)
40 ns
87 117 nC
18 ns
1.5 V
520
7.8
30
680
11.2
33
ns
µC
A
ns
µC
A
3/6
Page 4
STW47NM50
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Loa d
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/6
Page 5
TO-247 MECHANICAL DATA
STW47NM50
DIM.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V
V2
Dia 3.55 3.65 0.14 0.143
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
5º 5º
60º 60º
5/6
Page 6
STW47NM50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
STMicroelectronics GROUP OF COMPANIES
© http://www.st.com
6/6
Loading...