Datasheet STW45NM50FD Datasheet (SGS Thomson Microelectronics)

STW45NM50FD

N-CHANNEL 500V - 0.07Ω - 45A TO-247

FDmesh™Power MOSFET (With FAST DIODE)

TYPE V

DSS

R

DS(on)

I

D

STW45NM50FD 500V < 0.1Ω 45 A

n

TYPICAL RDS(on) = 0.07Ω

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

100% AVALANCHE TESTED

n

LOW INPUT CAPACITANCE AND GATE
CHARGE

n

LOW GATE INPUT RESIST ANC E

n

TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS

DESCRIPTION

The FDmesh™

associates all advantages of re-

duced on-resistance and fast swi tching with an in­trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par­ticular ZVS phase-shift converters.

APPLICATIONS

n

ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns

T

stg

T

j

(•)Pu l se width limite d by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

500 V
500 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(l)

Drain Current (pulsed) 180 A
Total Dissipation at TC = 25°C

45 A

28.4 A

417 W

Derating Factor 2.08 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD ≤45A, di/dt ≤400A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

1/8June 2002

STW45NM50FD

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.3 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 35 V)

j

ID = 250 µA, VGS = 0 500 V

22.5 A

800 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C
V

= ±30V ±100 nA

GS

10 µA

100 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 22.5A

345V

0.07 0.10 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 680 pF
Reverse Transfer

I

D

V

Capacitance

C

(3) Equivalent Output

oss eq.

VGS = 0V, VDS = 0V to 400V 350 pF

Capacitance

R

G

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

= 22.5A

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

20 S

3600 pF

82 pF

2 Ω

2/8

STW45NM50FD

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q

Q

Q

t

r

g

gs

gd

Turn-on Delay Time
Rise Time 28 ns
Total Gate Charge

Gate-Source Charge 22 nC
Gate-Drain Charge 40 nC

SWITCHING OFF

Symbol Param eter Test Conditions Min. Typ. Max. U nit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 25 ns
Cross-over Time 44 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 .5 %.

2. Pulse width limi ted by safe operating area .

3. C

Source-drain Current 45 A

(2)

Source-drain Current (pulsed) 180 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charg e 2.2 µC
Reverse Recovery Curren t 18 A

is defined as a const ant equivalent capacitance giving the same charging time a s C

oss eq.

V

.

DSS

= 250V, ID = 22.5A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 400V, ID = 45A,

DD

V

= 10V

GS

V

= 400V, ID = 45A,

DD

RG= 4.7Ω, V

GS

= 10V

(see test circuit, Figure 3)

ISD = 45A, VGS = 0
I

= 45A, di/dt = 100A/µs,

SD

V

= 100V

DD

(see test circuit, Figure 5)

28 ns

92 120 nC

11 ns

1.5 V

245 ns

when VDS increases from 0 to 80%

oss

Safe Operating Area Thermal Impedence

3/8

STW45NM50FD

Output Characteristics Transfer Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

Static Drain-source On Resistance

Capacitance Variations

4/8

STW45NM50FD

Source-drain Diode Forward Characteristics

Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

5/8

STW45NM50FD

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW45NM50FD

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43

H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º5º

60º 60º

7/8

STW45NM50FD

8/8

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