Page 1
STW33N20
N - CHANNEL ENHANCEMENT MODE
POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW33N20 200 V < 0.085 Ω 33 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW GATE CHARGE
■ HIGH CURRENTCAPABILITY
■ 150
■ APPLICATIONORIENTED
o
C OPERATINGTEMPERATURE
DS(on)
=0.073 Ω
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ DC-DCCONVERTERS &DC-AC INVERTERS
■ TELECOMMUNICATION POWER SUPPLIES
■ INDUSTRIAL MOTOR DRIVES
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
DM
P
T
(•) Pulsewidth limitedby safe operating area
October 1997
Drain-s ou r ce Voltage (VGS= 0) 200 V
DS
Drain- gate Voltage (RGS=20kΩ)
Gate-source Voltage ± 20 V
GS
I
Drain Curren t (cont inu ous) at Tc=25oC33A
D
I
Drain Curren t (cont inu ous) at Tc=100oC20A
D
200 V
(•) Drain Curren t (pulsed) 132 A
Tot al Di s sipa t ion at Tc=25oC 180 W
tot
Derat ing Fa c tor 1.44 W/
Storage Temperature -65 to 150
stg
T
Max. Operat ing Junct ion Temperature 150
j
o
C
o
C
o
C
1/9
Page 2
STW33N20
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lue Uni t
I
AR
E
Ther mal Resist ance Junction-c a s e Max
Ther mal Resist ance Junction-ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Te mperatu re Fo r Soldering Purp ose
l
Avalanche Curre nt, Repet it ive o r N ot-Repet it iv e
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
0.66
30
0.1
300
33 A
600 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
200 V
Breakdown Volt age
I
I
DSS
GSS
Zer o Gate Vo lt age
Drain Cur rent (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
= M ax Ra t ing Tc=100
DS
o
C
= ± 20 V
V
GS
10
100
± 100 nA
ON (∗)
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 16 A 0.073 0.085 Ω
Resistance
I
D(on)
On State Drain Curr e nt VDS>I
D(on)xRDS(on)max
33 A
VGS=10V
DYNAMIC
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=16A 10 22 S
VDS=25V f=1MHz VGS= 0 3500
550
120
4500
700
160
µA
µA
pF
pF
pF
2/9
Page 3
STW33N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=100V ID=16A
=4.7 Ω VGS=10V
R
G
25
50
(see test circuit, figure 3)
(di/dt)
Turn-on Current Slope VDD=160V ID=33A
on
=4.7 Ω VGS=10V
R
G
800 A/µs
(see tes t cir c uit , f igu r e 5)
Q
Q
Q
Total Gate Charge
g
Gat e-Source Charge
gs
Gate-Drain Charge
gd
VDD=160V ID=33A VGS= 10 V 110
17
50
SWITCHINGOFF
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-over Tim e
c
VDD=160V ID=33A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
30
30
60
SOURCE DRAIN DIODE
40
70
160 nC
45
45
90
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test C ondition s Min. Typ. M ax. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
33
132
(pulsed)
(∗) For ward On V o lt age ISD=10A VGS=0 1.6 V
V
SD
t
Q
Reverse R ec overy
rr
Time
Reverse R ec overy
rr
= 33 A di/d t = 100 A /µ s
I
SD
V
=100V Tj=150oC
DD
(see test circuit, figure 5)
400
5.6
Charge
I
RRM
Reverse R ec overy
28
Current
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimited by safe operating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/9
Page 4
STW33N20
Derating Curve
TransferCharacteristics
OutputCharacteristics
Transconductance
StaticDrain-source On Resistance
4/9
Gate Charge vsGate-sourceVoltage
Page 5
STW33N20
CapacitanceVariations
Normalized On Resistance vs Temperature
Normalized Gate ThresholdVoltagevs
Temperature
Turn-onCurrent Slope
Turn-offDrain-source VoltageSlope
Cross-overTime
5/9
Page 6
STW33N20
SwitchingSafe OperatingArea
Source-drainDiode ForwardCharacteristics
AccidentalOverload Area
Fig. 1: UnclampedInductiveLoad TestCircuit
6/9
Fig. 2: UnclampedInductive Waveform
Page 7
STW33N20
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 5: Test CircuitFor InductiveLoad Switching
And DIodeRecovery Times
Fig. 4: Gate Charge test Circuit
7/9
Page 8
STW33N20
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
8/9
P025P
Page 9
STW33N20
Informationfurnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rights of third partieswhich may results fromits use.No
license is granted by implication or otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics -Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong - Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands -
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