Datasheet STW26NM60 Datasheet (SGS Thomson Microelectronics)

1/8September 2002

STW26NM60

N-CHANNEL 600V - 0.125Ω - 26A TO-2 47

Zener-Protected MDmesh™Power MOSFET

n

TYPICAL RDS(on) = 0.125Ω

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

IMPROVED ESD CAPABILITY

n

LOW INPUT CAPACITANCE AND GATE
CHARGE

n

LOW GATE INPUT RESIST ANC E

DESCRIPTION

The MDmesh™

is a new revolutionary MOSFET

technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.

ORDERING INFORMATION

TYPE V

DSS

R

DS(on)

I

D

STW26NM60 600 V < 0.135 Ω 30 A

SALES TYPE MARKING PACKAGE PACKAGING

STW26NM60 W26NM60 TO-247 TUBE

TO-247

INTERNAL SCHEMATIC DIAGRAM

STW26NM60

2/8

ABSOLUTE MAXIMUM RATINGS

(l) Pulse wi dth limited by safe operating area
(1) I

SD

≤26A, di/dt ≤200A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

THERMA L D ATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (VGS = 0)

600 V

V

DGR

Drain-gate Voltage (RGS = 20 kΩ)

600 V

V

GS

Gate- source Voltage ± 30 V

I

D

Drain Current (continuous) at TC = 25°C

30 A

I

D

Drain Current (continuous) at TC = 100°C

18.9 A

I

DM

(l)

Drain Current (pulsed) 120 A

P

TOT

Total Dissipation at TC = 25°C

313 W

Derating Factor 2.5 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 6000 V

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

T

j

T

stg

Operating Junction Temperature
Storage Temperature

-55 to 150 °C

Rthj-case Thermal Resistance Junction-case Max 0.4 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300

°C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

13 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID = IAR, VDD = 50 V)

740 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igss=± 1mA (Open Drain) 30 V

3/8

STW26NM60

ELECTRICAL CHARACTERISTICS (T

CASE

=25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 250 µA, VGS = 0 600 V

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

VDS = Max Rating, TC = 125 °C

10

100

µA
µA

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

V

GS

= ± 20V ±10 µA

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 13 A 0.125 0.135 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS = 15 V, ID= 13 A 20 S

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

DS

= 25V, f = 1 MHz, VGS = 0 2900

900

40

pF
pF
pF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time
Rise Time

VDD = 300V, ID = 13 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

35
22

ns
ns

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = 480V, ID = 26 A,
V

GS

= 10V

73
20
37

102

nC
nC
nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

V

DD

= 480V, ID = 26 A,

RG=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

14
20
40

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(2)

Source-drain Current
Source-drain Current (pulsed)

26

104

A
A

VSD (1)

Forward On Voltage

ISD = 26 A, VGS = 0

1.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 26 A, di/dt = 100A/µs

V

DD

= 100 V, Tj = 25°C

(see test circuit, Figure 5)

450

7

30.5

ns

µC

A

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 26 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)

560

9

32.5

ns

µC

A

STW26NM60

4/8

Safe Operating Area For TO-247 Thermal Impedance For TO -247

Transfer Characteristics

Static Drain-source On Resistance

Output Characteristics

Transco nductance

5/8

STW26NM60

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forw ard Ch aracteristi cs

Normalized On Resistance vs Temperature

STW26NM60

6/8

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

7/8

STW26NM60

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05

F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79

L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11
V

5º5º

V2

60º 60º

Dia 3.55 3.65 0.14 0.143

TO-247 MECHANICAL DATA

STW26NM60

8/8

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