Page 1
查询STB22NM60供应商
STP22NM60 - STF22NM60
STB22NM60 - STB22NM60-1 - STW22NM60
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE V
STP22NM60
STF22NM60
STB22NM60
STB22NM60-1
STW22NM60
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AV ALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DSS
600 V
600 V
600 V
600 V
600 V
(on) = 0.19Ω
DS
R
DS(on)Rds(on)*QgID
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
22 A
22 A
22 A
22 A
22 A
DESCRIPTION
This improved version of MDmesh™ which is based
on Multiple Drain proc ess represents the new benchmark in high voltage MOSFETs. The resulting product
exhibits ev en lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip technique
yields overall performances that are significantlybetter
than t hat of simi lar compet it ion’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing system miniaturization and higher efficiencies.
3
2
1
2
1
TO-220FP
3
TO-220
TO-247
3
2
1
2
PAK
I
I
NTERNAL SCHEMATIC DIAGRAM
D
2
PAK
3
2
1
3
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP22NM60 P22NM60 TO-220 TUBE
STF22NM60 F22NM60 TO-220FP TUBE
STB22NM60
STB22NM60-1
B22NM60T4 D
B22NM60-1 I
STW22NM60 W22NM60 TO-247 TUBE
June 2003
²PAK TAPE & REEL
²PAK TUBE
1/11
Page 2
STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60
ABSOLUTE M AXIMUM RA TINGS
Symbol Parameter Value Unit
STP22NM60
STB22NM60/1
Drain-source Voltage (VGS=0)
DS
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
GS
Drain Current (continuous) at TC= 25°C
D
Drain Current (continuous) at TC= 100°C
D
()
Drain Current (pulsed) 80 80(*) 80 A
Total Dissipation at TC= 25°C
22 22 (*) 22 A
12.6 12.6 (*) 12.6 A
192 45 210 W
I
V
DM
P
V
DGR
V
I
I
TOT
Derating Factor 1.2 0.36 1.2 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
V
T
T
Insulation Winthstand Voltage (DC) -- 2500 -- V
ISO
Storage Temperature –65 to 150 °C
stg
Max. Operating Junction Temperature 150 °C
j
() Pulse width limited by safe operating area; (*)Limited only by maximum temperature allowed
≤22A, di/dt ≤400A/µs, VDD≤ V
(1) I
SD
(BR)DSS,Tj≤TJMAX.
STF22NM60 STW22NM60
600 V
600 V
THERMAL DATA
2
TO-220/D
PAK/I2PAK/TO-247
Rthj-case ThermalResistanceJunction-case Max 0.65 2.8 °C/W
Rthj-amb ThermalResistanceJunction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering
l
300 °C
Purpose
TO-220FP
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25°C,ID=IAR,VDD=50V)
j
max)
j
ELECTRICAL CHARACT ERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
11 A
650 mJ
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS=0 600 V
V
= Max Rating
DS
= Max Rating, TC=125°C
V
DS
V
= ±30 V ±100 nA
GS
V
DS=VGS,ID
= 250 µA
34
1
10
5V
VGS=10V,ID= 11 A 0.19 0.25 Ω
µA
µA
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Page 3
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ELECTRICAL CHARACT ERISTICS (CO NTINUE)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
ID=11A
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(2) Equivalent Output
=25V,f=1MHz,VGS= 0 1590
V
DS
VGS=0V,VDS= 0V to 400V 130 pF
Capacitance
R
g
Gate Input Resistance f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
when VDSincreases from 0 to 80% V
oss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=200V,ID=11A
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
VDD=400V,ID=22A,
VGS=10V
TBD S
803
52
1.6 Ω
25
20
40
71
11
25
pF
pF
pF
ns
ns
nC
nC
nC
DSS
.
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time 15 ns
Cross-over Time 26 ns
= 480 V, ID=22A,
DD
RG=4.7Ω, VGS=10V
(see test circuit, Figure 5)
13 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 20 A
(2)
Source-drain Current (pulsed) 80 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=22A,VGS=0
= 22 A, di/dt = 100 A/µs,
I
SD
VDD=100V,Tj=25°C
(see test circuit, Figure 5)
= 22 A, di/dt = 100 A/µs,
I
SD
=100V,Tj=150°C
V
DD
(see test circuit, Figure 5)
416
5.6
27
544
7.3
28
1.5 V
ns
µC
A
ns
µC
A
3/11
Page 4
STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/11
Page 5
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
E
P011C
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
5/11
Page 6
STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
6/11
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
Page 7
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
3
7/11
1
Page 8
STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
mm inch
C
8/11
A
A1
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
Page 9
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0 .626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
mm inch
MIN. MAX. MIN. MAX.
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1. 039
N 100 3.937
T 30.4 1.197
BASE QT Y BULK QTY
mm inch
MIN. MAX. MIN. MAX.
1000 1000
* on sales t y pe
9/11
Page 10
STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60
TO-247 MECHANICAL DATA
DIM.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5.50 0.216
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/11
Page 11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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