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STW220N F75
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 75V - 0.004 Ω - 120A TO-247
STripFET™ II POWER MOSFET
TYPE
V
DSS
STW220NF75 75V <0.0044Ω120A(**
■ TYPICAL R
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
(on) = 0.004Ω
DS
R
DS(on)
I
D
)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectron is unique "Single Feature Size™" str ipbased process . The res ulting tran sistor sho ws extrem ely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ AUTOMOTIVE 42V BATTERY SYSTEM
■ OR-ING FUNCTION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(**
I
D
(**
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
•) Pulse width limited by safe operating area.
(**) Curre nt Limited by Pac kage
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
75 V
75 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
)
Drain Current (continuous) at TC = 100°C
)
•)
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C
120 A
120 A
500 W
Derating Factor 3.33 W/°C
(1)
Peak Diode Recovery voltage slope 10 V/ns
(2)
Single Pulse Avalanche Energy 2500 mJ
Storage Temperature
Operating Junction Temperature
(1) ISD ≤120A, di/dt ≤100A/µs, VDD ≤ V
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
1/8May 2003
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Obsolete Product(s) - Obsolete Product(s)
STW220NF75
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
j
(1.6 mm from case, for 10 sec)
Max
Max
Typ
0.30
50
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source Breakdown
I
D
75 V
Voltage
= Max Rating
V
DS
V
= Max Rating TC = 125°C
DS
= ± 20V
V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
V
= 10 V ID = 60 A
GS
= 250 µA
D
24V
0.004 0.0044
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25 V ID= 60 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
200 S
12500
2150
600
µA
µA
Ω
pF
pF
pF
2/8
Page 3
Obsolete Product(s) - Obsolete Product(s)
STW220NF75
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 38 V ID = 60 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=38V ID=120A VGS=10V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 38 V ID = 60 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operatin g area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 120 A VGS = 0
SD
= 120 A di/dt = 100A/µs
I
SD
V
= 32 V Tj = 150°C
DD
(see test circuit, Figure 5)
50
215
350
60
135
250
130
140
770
11
430 nC
120
480
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/8
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Obsolete Product(s) - Obsolete Product(s)
STW220NF75
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
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Obsolete Product(s) - Obsolete Product(s)
STW220NF75
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature
. .
5/8
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Obsolete Product(s) - Obsolete Product(s)
STW220NF75
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
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Obsolete Product(s) - Obsolete Product(s)
TO-247 MECHANICAL DATA
STW220NF75
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
7/8
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Obsolete Product(s) - Obsolete Product(s)
STW220NF75
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.
The ST logo is registered trademark of STMicroelectronics
2003 STMi croelectr onics - All Rights Rese rved
All other na m es are the prop erty of their respectiv e owners.
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8/8
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