Datasheet STV160NF03L Datasheet (SGS Thomson Microelectronics)



STV160NF03L

N - CHANNEL 30V - 0.0019Ω - 160A PowerSO-10

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST V160NF03L 30 V < 0.0028 Ω 160 A

■ TYPICALR

■ ULTRA LOW ON-RESISTANCE

■ ULTRA FAST SWITCHING

■ 100%AVALANCHETESTED

■ VERYLOW GATE CHARGE

■ LOW THRESHOLDDRIVE

■ LOW PROFILE, VERY LOWPARASITIC

DS(on)

= 0.0019 Ω

INDUCTANCE PowerSO-10 PACKAGE

DESCRIPTION

The STV160NF03L represents the second
generation of Application Specific
STMicroelectronics well established STripFET
process based on a very unique strip layout
design. The resulting MOSFET shows unrivalled
high packing density with ultra low on-resistance
and superior switching charactestics. Process
simplification also translates into improved
manufacturing reproducibility. This device is
particularly suitable for high current, low voltage
switchingapplicationwhere efficiency is crucial.

10

1

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

CONNECTIONDIAGRAM (TOP VIEW)

APPLICATIONS

■ BUCK CONVERTERSIN HIGH

PERFORMACETELECOMAND VRMs
DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

D

I

DM

P

T

(•) Pulse width limited by safe operating area (**) Limited only maximumjunction temperature allowed by PowerSO-10

November 1999

Drain-source Voltage (VGS=0) 30 V

DS

Drain- gate Volt ag e (RGS=20kΩ)30V

DGR

Gate - source V o lt age

GS

20 V

±

(**) Drain Current (cont inu ous ) at Tc=25oC 160 A

I

Drain Cur rent (co nt inu ous ) at Tc=100oC 113 A

D

(•) Drain Cur rent (pu lsed) 640 A

Tota l Dissipat i on at Tc=25oC 160 W

tot

Derat ing Factor 1.07 W/
Stor age Temperat ure -65 to 175

stg

Max. Operat ing Junction Temperature 175

T

j

o

C

o

C

o

C

1/8

STV160NF03L

THERMAL DATA

R

thj-case

R

thj-amb

T

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum L ead T e m perature For Soldering Purpose

l

0.9375
50

300

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unlessotherwisespecified)

(T

J

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=25oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µATc=25oC11.72.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=80A

=8V ID=80A

V

GS

V

=4.5V ID=40A

GS

=10V ID=80A Tj=175oC

V

GS

V

=8V ID=80A Tj=175oC

GS

=4.5V ID=40A Tj= 175oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

1.9

2.0

4.0

160 A

2.8

3.8

6.7

6.4

7.8

12.8

VGS=10V

µA
µA

m
mΩ
m
mΩ
m
mΩ

Ω
Ω
Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

gfs(∗)Forward

Tr ansc on duc tance

R

C

C

C

Gate re sistance VDS=15V f=1MHz VGS=0 0.9 Ω

g

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

2/8

VDS>I

D(on)xRDS(on )maxID

= 80 A 210 S

VDS=15V f=1MHz VGS= 0 4900

2950

565

VDS=0V f=1MHz VGS= 0 7200

13000

4220

pF
pF
pF

pF
pF
pF

STV160NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

Tur n-on Delay T ime
Rise Time

t

r

VDD=15V ID=40A
R

=4.7

G

Ω

VGS=10V

23

350

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate C har ge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=16V ID= 160 A VGS= 10 V 103

38

9

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=15V ID=40A
R

G

=4.7

Ω

VGS=10V

105
120

(Resis t iv e Load, see fig. 3)

t

d(off)

t

r(Voff)

t

t

Tur n-of f Dela y Tim e
Off-volt ag e Rise Time
Fall T ime

f

Cross-over Tim e

c

V

=16V ID=80A

clamp

R

=4.7

G

Ω

VGS=10V

(Indu ct iv e Load, see fig. 5)

85

46
335
404

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

160
640

(pulsed)

(∗)ForwardOnVoltage ISD= 160 A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 80 A di/dt = 100 A/µs

=15V

V

DD

(see test circuit, fig. 5)

100

0.25
Charge
Reverse Recovery

5

Current

ns
ns

nC
nC
nC

ns
ns

ns
ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8

STV160NF03L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STV160NF03L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

BasicSchematic For MotherboardVRM Whith
SynchronousRectification

BasicSchematic Mosfet Switch Used In
SecondarySideOf a FowardConvert

5/8

STV160NF03L

Fig. 1

: UnclampedInductiveLoadTest Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2

: UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5

: TestCircuit For Inductive Load Switching

And Diode Recovery Times

6/8

PowerSO-10 MECHANICAL DATA

STV160NF03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING
PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

7/8

STV160NF03L

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. Thispublication supersedes and replaces all information previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devicesor systemswithout express written approval of STMicroelectronics.

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