Datasheet STV160NF02L Datasheet (SGS Thomson Microelectronics)



STV160NF02L

N - CHANNEL 20V - 0.0016Ω - 160A - PowerSO-10

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST V160NF02L 20 V < 0.0025 Ω 160 A

■ TYPICALR

■ ULTRA LOW ON-RESISTANCE

■ ULTRA FAST SWITCHING

■ 100%AVALANCHETESTED

■ VERYLOW GATE CHARGE

■ LOW THRESHOLDDRIVE

■ LOW PROFILE, VERY LOWPARASITIC

DS(on)

= 0.0016 Ω

INDUCTANCE PowerSO-10PACKAGE

DESCRIPTION

The STV160NF02L represents the second
generation of Application Specific
STMicroelectronics well established STripFET
process based on a very unique strip layout
design. The resulting MOSFET shows unrivalled
high packing density with ultra low on-resistance
and superior switching charactestics. Process
simplification also translates into improved
manufacturing reproducibility. This device is
particularly suitable for high current, low voltage
switchingapplicationwhere efficiency is crucial.

10

1

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

CONNECTIONDIAGRAM (TOP VIEW)

APPLICATIONS

■ BUCK CONVERTERSIN HIGH

PERFORMACETELECOMAND VRMs
DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

D

I

DM

P

T

(•) Pulse width limited by safe operating area (**) Limited only maximumjunction temperature allowed by PowerSO-10

June 1999

Drain-source Voltage (VGS=0) 20 V

DS

Drain- gate Voltage (RGS=20kΩ)20V

DGR

Gate - source V o lt age

GS

20 V

±

(**) Drain Current (cont inu ous) at Tc=25oC 160 A

I

Drain Current (cont inu ous) at Tc=100oC 113 A

D

(•) Drain Current (pulsed) 640 A

Tota l Dissipati on at Tc=25oC 160 W

tot

Derat ing F ac t or 1.07 W/
Stor age Tem perature -65 to 175

stg

Max. Operating Junct ion Tem perature 175

T

j

o

C

o

C

o

C

1/8

STV160NF02L

THERMAL DATA

R

thj-case

R

thj-amb

T

Ther mal Resistance J unction- cas e Max
Ther mal Resistance J unction- ambient Max
Maximum Lead Temperatu re F or So lder ing Purpos e

l

0.9375
50

300

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unlessotherwisespecified)

(T

J

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 20 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Cur rent ( V

GS

Gat e- bod y L eak ag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=25oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µATc=25oC11.72.5V
Sta t ic Drain -s ource On

Resistance

VGS=10V ID=80A

=8V ID=80A

V

GS

V

=4.5V ID=40A

GS

=10V ID=80A Tj=175oC

V

GS

V

=8V ID=80A Tj=175oC

GS

=4.5V ID=40A Tj= 175oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

1.6

1.7

3.5

160 A

2.5

3.5
6

5.7
7

11.4

VGS=10V

µA
µA

m
mΩ
m
mΩ
m
mΩ

Ω
Ω
Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

gfs(∗)Forward

Tr ansc on duc tance

R

C

C

C

Gate re sistance VDS=15V f=1MHz VGS=0 0.9 Ω

g

Input Capac i t ance

iss

Out put Capacitanc e

oss

Reverse Tr ansfer

rss

Capacit a nc e

C

C

C

Input Capac i t ance

iss

Out put Capacitanc e

oss

Reverse Tr ansfer

rss

Capacit a nc e

2/8

VDS>I

D(on)xRDS(on )maxID

= 80 A 210 S

VDS=15V f=1MHz VGS= 0 4900

2950

565

VDS=0V f=1MHz VGS= 0 7200

13000

4220

pF
pF
pF

pF
pF
pF

STV160NF02L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

Tur n-on Delay Time
Rise Ti m e

t

r

VDD=15V ID=40A
R

=4.7

G

Ω

VGS=10V

23

350

(Resis t iv e Loa d, see fig. 3)

Q
Q
Q

Tot al Gat e Charge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD=16V ID= 160 A VGS= 10 V 103

38

9

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(off)

Tur n-of f D ela y Time

t

Fall T ime

f

VDD=15V ID=40A
R

G

=4.7

Ω

VGS=10V

105
120

(Resis t iv e Loa d, see fig. 3)

t

d(off)

t

r(Voff)

t

t

Tur n-of f D ela y Time
Off-volt ag e Rise T ime
Fall T ime

f

Cross-over T im e

c

V

=16V ID=80A

clamp

R

=4.7

G

Ω

VGS=10V

(Indu ct iv e Load , see f ig . 5)

85

46
335
404

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration= 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

160
640

(pulsed)

(∗)ForwardOnVoltage ISD= 160 A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 80 A di/dt = 10 0 A/µs

=15V

V

DD

(see test circuit, fig. 5)

100

0.25
Charge
Reverse Recovery

5

Current

ns
ns

nC
nC
nC

ns
ns

ns
ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8

STV160NF02L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STV160NF02L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

BasicSchematic For MotherboardVRM Whith
SynchronousRectification

BasicSchematic Mosfet Switch Used In
SecondarySideOf a FowardConvert

5/8

STV160NF02L

Fig. 1

: UnclampedInductiveLoadTest Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2

: UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5

: TestCircuit For Inductive Load Switching

And Diode Recovery Times

6/8

PowerSO-10 MECHANICAL DATA

STV160NF02L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING
PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

7/8

STV160NF02L

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. Thispublication supersedes and replaces all information previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devicesor systemswithout express written approval of STMicroelectronics.

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