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1/10Sep 2000
STU8NC90Z
STU8NC90ZI
N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
■ TYPICAL R
DS
(on) = 1.1Ω
■ EXTREMELY HIGH dv /d t C APABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPAC ITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pu l se width limi te d by safe oper ating area
TYPE V
DSS
R
DS(on)
I
D
STU8NC90Z
STU9NC90Z I
900 V
900 V
< 1.38
Ω
< 1.38
Ω
7 A
7 A
Symbol Parameter Value Unit
STU8NC90Z STU8NC90ZI
V
DS
Drain-source Voltage (VGS = 0)
900 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
900 V
V
GS
Gate- source Voltage ±25 V
I
D
Drain Current (continuos) at TC = 25°C
7 7(*) A
I
D
Drain Current (continuos) at TC = 100°C
4.4 4.4(*) A
I
DM
(1)
Drain Current (pulsed) 28 28(*) A
P
TOT
Total Dissipation at TC = 25°C
160 55 W
Derating Factor 1.28 0.44 W/°C
I
GS
Gate-source Current ±50 mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
Ω)
4KV
dv/dt(
●) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
Insulation Winthstand Voltage (DC) -- 2000 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
(*)Limit ed only by maxi mum temperature allow ed
Max220
I-Max220
1
2
3
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STU8NC90Z/STU8NC90ZI
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THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Max220 I-Max220
Rthj-case Thermal Resistance Junction-case Max 0.78 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
430 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 900 V
∆
BV
DSS
/∆TJBreakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0 1
V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC = 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V
±10 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.8A
1.1 1.38
Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
V
GS
=10V
7A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance VDS > I
D(on)
x R
DS(on)max,
I
D
= 3.8A
9S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0
3550 pF
C
oss
Output Capacitance 205 pF
C
rss
Reverse Transfer
Capacitance
25 pF
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STU8NC90Z/STU8NC90ZI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
3. ∆
V
BV
= αT (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrat ed Z ener diodes thus avoi d t he
usage of external components.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 400V, ID = 4A
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
36 ns
t
r
Rise Time 12 ns
Q
g
Total Gate Charge
V
DD
= 720V, ID = 8 A,
VGS = 10V
73 102 nC
Q
gs
Gate-Source Charge 18 nC
Q
gd
Gate-Drain Charge 27 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 720V, ID = 8 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
36 ns
t
f
Fall Time 45 ns
t
c
Cross-over Time 77 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 7 A
I
SDM
(2)
Source-drain Current (pulsed) 28 A
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
1.6 V
t
rr
Reverse Recovery Time
I
SD
= 8 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
860 ns
Q
rr
Reverse Recovery Charge 10 µC
I
RRM
Reverse Recovery Current 24 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 25 V
α
T Voltage Thermal Coefficient T=25°C Note(3) 1.3
10
-4
/°C
Rz Dynamic Resistance
I
GS
= 50 mA, VGS = 0
90
Ω
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Output Characteristics
Safe Operating Area For I-Max2 20
Safe Operating Area For Max220
Thermal Impedance For Max220 Thermal Impedance For I-Max220
Transfer Characteristics
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STU8NC90Z/STU8NC90ZI
Normalized On Resistance vs Temperatur eNormalized Gate Threshold Volta ge vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
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Source-drain Diode Forw ard Ch aracteristi cs
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STU8NC90Z/STU8NC90ZI
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.18 0.023
D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
A
A2
A1
C
D3 D1
D2
D
b1
b2
b
E
L
L1
e
P011R
Max220 MECHANICAL DATA
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STU8NC90Z/STU8NC90ZI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.6 2.75 0.102 0.108
A2 1.95 2.15 0.077 0.084
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.017 0.02 3
D 15.9 16.3 0.626 0.641
D1 12.5 12.9 0.492 0.508
D2 0.6 1 0.023 0.039
D3 1.75 2.15 0.069 0.084
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
P011S
I-Max220 MECHANICAL DATA
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STU8NC90Z/STU8NC90ZI
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
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