Datasheet STU7NB90I Datasheet (SGS Thomson Microelectronics)

STU7NB90

STU7NB90I

N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I

PowerMesh™ MOSFET

TYPE V

DSS

STU7NB90 900 V < 1.45
STU7NB90I 900 V < 1.45

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

■ REDUCED VOLTAGE SPREAD

(on) = 1.1 Ω

DS

R

DS(on)

I

D

Ω

7.3 A

Ω

7.3 A

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest R

DS(on)

per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT

3

2

1

Max220

Max220I

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STU7NB90 STU7NB90I

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limited by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

900 V
900 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 29.2 29.2 (*) A
Total Dissipation at TC = 25°C

7.3 7.3 (*) A

4.6 4.6 (*) A

170 60 W

Derating Factor 1.36 0.47 W/°C

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD ≤7.3 A, di/dt ≤200A/µs, VDD ≤ V

(*) Curren t Lim i ted by Pack age

(BR)DSS

, Tj ≤ T

JMAX.

1/9May 2001

STU7NB90 - STU7NB90I

THERMA L D ATA

Max220 Max220 I

Rthj-case Thermal Resistance Junction-case Max 0.734 2.1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 900 V

7.3 A

600 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250 µA

DS

VGS = 10 V, ID = 4 A

234V

1.1 1.45

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 225 pF
Reverse Transfer

Capacitance

ID=4 A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

8S

2120 pF

23 pF

Ω

2/9

STU7NB90 - STU7NB90I

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge

Gate-Source Charge 12.5 nC
Gate-Drain Charge 23.5 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 31 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating ar ea.

Source-drain Current 7.3 A

(2)

Source-drain Current (pulsed) 29.2 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 6.3 µC
Reverse Recovery Current 18 A

= 450 V, ID = 3.5 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 720V, ID = 7.4A,

DD

VGS = 10V

V

= 720V, ID = 7.4 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 7.3 A, VGS = 0
I

= 7.4 A, di/dt = 100A/µs,

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

25 ns

51 72 nC

22 ns

1.6 V

700 ns

Safe Operating Area for Max220ISafe Operating Area for Max220

3/9

STU7NB90 - STU7NB90I

Thermal Impedence for Max220IThermal Impedence for Max220

Output Characteristics Transfer Characteristics

4/9

Static Drain-source On ResistanceTransconductance

STU7NB90 - STU7NB90I

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STU7NB90 - STU7NB90I

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

Max220 MECHANICAL DATA

STU7NB90 - STU7NB90I

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122

b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054

c 0.45 0.6 0.18 0.023

D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126

e 2.44 2.64 0.096 0.104

E 10.05 10.35 0.396 0.407

L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133

D3 D1

A

mm inch

D2

A2

C

A1

D

b1

b2

E

L1

L

b

e

P011R

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STU7NB90 - STU7NB90I

I-Max220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.18 1
A1 2.6 2.75 0.102 0.108
A2 1.95 2.15 0.077 0.084

b 0.7 0.93 0.027 0.036

b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054

c 0.45 0.6 0.017 0.023

D 15.9 16.3 0.626 0.641
D1 12.5 12.9 0.492 0.508
D2 0.6 1 0.023 0.039
D3 1.75 2.15 0.069 0.084

e 2.44 2.64 0.096 0.104

E 10.05 10.35 0.396 0.407

L 13.2 13.6 0.520 0.535

L1 3 3.4 0.118 0.133

mm inch

8/9

P011S

STU7NB90 - STU7NB90I

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of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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