Datasheet STU7NB100 Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 1000V - 1.2Ω - 7.3A - Max220

TYPE V

DSS

STU7NB100 1000 V < 1.5 Ω 7.3 A

■

TYPICAL R

■

EXTREMELY HIGH dv/dt CAPABILITY

■

30V GATE TO SOURCE VOLTAGE RATING

±

■

100% AVALANCHE TESTED

■

LOW INTRINSIC CAPACITANCE

■

GATE CHARGE MINIMIZED

■

REDUCED VOLTAGE SPREAD

DS(on)

= 1.2

R

DS(on)

I

D

Ω

STU7NB100

PowerMESH MOSFET

PRELIMINARY DATA

3

2

1

DESCRIPTION

Using the latest high voltage MESH OVERLAY



Max220

process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstand­ing performances. The new patent pending st rip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and

INTERNAL SCHEMATIC DIAGRAM

dv/dt capabilities and unrivalled gate charge and
switching characteristics.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCH ING

■

SWITCH MODE POWER SUPPLY (SMPS)

■

DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTA BLE
POWER SUPPLY AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/dt

T

(•) Pulse width limited by safe operating area (1) ISD

March 1999

Drain-source Voltage (VGS = 0) 1000 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC7.3A

D

I

Drain Current (continuous) at Tc = 100 oC4.7A

D

1000 V

(•) Drain Current (pulsed) 29 A

Total Dissipation at Tc = 25 oC 160 W

tot

Derating Factor 1.28 W/
Peak Diode Recovery voltage slope 4 V/ns

(1)

Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

≤7.3 Α,

di/dt ≤ 200 A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

o

C

o

C

o

C

1/5

STU7NB100

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERIST ICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max)

j

DD

= 50 V)

0.78

62.5

0.5

300

7.3 A

600 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

1000 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125

DS

o

C

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

345V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10 V ID = 4 A 1.2 1.5 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

7.3 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C
C
C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 4 A 8.9 S

= 0 2900

GS

275

27

µA
µA

pF
pF
pF

2/5

STU7NB100

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Time
Rise Time

t

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 500 V ID = 3.5 A

DD

= 4.7 Ω VGS = 10 V

R

G

V

= 800 V ID = 7 A V

DD

= 10 V 68

GS

32
13

95 nC
16
31

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 800 V ID = 7 A

DD

= 4.7 Ω VGS = 10 V

R

G

32
32
40

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

7.3
29

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 7.3 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 7 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

1000

11

Charge

I

RRM

Reverse Recovery

21

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/5

STU7NB100

Max220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122

b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054

c 0.45 0.6 0.18 0.023

D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126

e 2.44 2.64 0.096 0.104

E 10.05 10.35 0.396 0.407

L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133

mm inch

D3 D1

D2

C

A

E

A2

A1

D

b1

b2

L1

L

b

e

P011R

4/5

STU7NB100

Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without express written ap proval o f STM icroelectronics.

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