Datasheet STU7NA90 Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 900V - 1.05 Ω - 7A - Max220

FAST POWER MOS TRANSISTOR

TYPE V

DSS

STU7NA90 900 V < 1.3 Ω 7 A

■ TYPICAL R

■ ± 30V GATE TO SO URCE VO LT AG E

DS(on)

= 1.05 Ω

RANTING

■ 100% AVALANCHE TESTE D

■ REPETITIVE AV A LANCHE DATA AT 100

■ LOW INTRINSIC CAPACITANCE

■ GATE CHARGE MINIMIZED

■ REDUCED VOLTAG E SP REA D

R

DS(on)

STU7NA90

PRELIMINARY DATA

I

D

o

C

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED S WITCHI NG

■ SWITCH MODE PO WE R S UPP LY (S MPS )

■ CONSUMER AND I NDUS TRIA L LI G HTING

■ DC-AC CONVERT E R FOR W E LDI NG

Max220

EQUIPMENT AND UN INTERRUPTABLE
POWER SUPP LY (UPS)

INTERNAL SCHEMAT I C DIAGRAM

ABSOLUTE MA XIMU M RAT INGS

Symbol Parameter Value Unit

V

V

V

IDM(•) Drain Current (pulsed) 28 A

P

T

(•) Pulse width limited by safe operating area

Drain-source Voltage (VGS = 0) 900 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC7A

D

I

Drain Current (continuous) at Tc = 100 oC 4.41 A

D

Total Dissipation at Tc = 25 oC 160 W

tot

Derating Factor 1.28 W/
Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

900 V

o

C

o

C

o

C

June 1998

1/5

STU7NA90

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-si n k

T

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERISTI CS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max, δ < 1%)

j

DD

= 25 V)

0.78
30

0.1

300

7A

700 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specif ied)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

900 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 100oC

DS

V

= ± 30 V

GS

50

500

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS ID = 250 µA

V

DS

VGS = 10 V ID = 3 A 1.05 1.3 Ω

2.25 3 3.75 V

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

7A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 3.5 A 7 9 S

= 0 3100

GS

310
100

4000

400
130

µA
µA

pF
pF
pF

2/5

STU7NA90

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

V

= 450 V ID = 3.5 A

DD

RG = 4.7 Ω VGS = 10 V

26
18

37
25

ns
ns

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 720 V ID = 7 A V

DD

= 10 V 125

GS

17
58

175 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 720 V ID = 7 A

DD

= 4.7 Ω VGS = 10 V

R

G

34
14
53

48
20
74

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

7

28

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 7 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 7 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

810

13

Charge

I

RRM

Reverse Recovery

32

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/5

STU7NA90

Max220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122

b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054

c 0.45 0.6 0.18 0.023

D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126

e 2.44 2.64 0.096 0.104

E 10.05 10.35 0.396 0.407

L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133

mm inch

D3 D1

D2

C

A

E

A2

A1

D

b1

b2

L1

L

b

e

P011R

4/5

STU7NA90

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

.

5/5