The STTH8R06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
continuous mode power factor corrections and
hard switching conditions.
8 A
600 V
5.5 A
175°C
1.4 V
25 ns
K
TO-220AC
STTH8R06D
K
NC
D2PAK
STTH8R06G
STTH8R06
NC
A
K
A
K
A
K
TO-220FPAC
STTH8R06FP
K
A
I2PAK
STTH8R06R
Table 2: Order Codes
Part NumberMarking
STTH8R06DSTTH8R06D
STTH8R06FPSTTH8R06FP
STTH8R06RSTTH8R06R
STTH8R06GSTTH8R06G
STTH8R06G-TRSTTH8R06G
STTH8R06DISTTH8R06DI
STTH8R06DIRGSTTH8R06DI
December 2004REV. 4
A
K
TO-220AC Insulated
STTH8R06DI
1/9
Page 2
STTH8R06
Table 3: Absolute Ratings (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
T
Table 4: Thermal Resistance
SymbolParameterValue (max).Unit
R
th(j-c)
Repetitive peak reverse voltage600V
RMS forward voltage
TO-220AC / TO-220FPAC / D
2
PAK / I2PAK
TO-220AC Ins.24
Average forward current
δ = 0.5
TO-220AC / D
2
PAK
/ I
2
Tc = 130°C 8A
PAK
TO-220FPACTc = 85°C
TO-220AC Ins.Tc = 100°C
Surge non repetitive forward currenttp = 10ms sinusoidal80A
Storage temperature range-65 to + 175°C
stg
Maximum operating junction temperature175°C
j
Junction to case
TO-220AC / D
2
PAK / I2PAK
2.2°C/W
TO-220FPAC4.6
TO-220AC Ins.3.8
30A
Table 5: Static Electrical Characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
Reverse leakage current Tj = 25°CVR = V
I
R
= 125°C35400
T
j
V
Forward voltage dropTj = 25°CIF = 8A2.9V
F
= 125°C1.41.8
T
j
To evaluate the conduction losses use the following equation: P = 1.16 x I
F(AV)
RRM
+ 0.08 I
F2(RMS)
30µA
Table 6: Dynamic Characteristics
SymbolParameterTest conditionsMin. Typ Max. Unit
I
RM
t
Reverse recovery
rr
time
Reverse recovery
current
Tj = 25°CIF = 0.5A Irr = 0.25A IR =1A25ns
= 1A dIF/dt = -50 A/µs VR =30V45
I
F
Tj = 125°C IF = 8A VR = 400V
/dt = -200 A/µs
dI
F
5.57.2A
S factor Softness factor0.3
QrrReverse recovery
150nC
charges
t
Forward recovery
fr
time
V
Forward recovery
FP
Tj = 25°CIF = 8A dIF/dt = 64 A/µs
V
= 1.1 x V
FR
Fmax
150ns
5V
voltage
2/9
Page 3
STTH8R06
Figure 1: Conduction losses versus average
current
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
0246810
δ = 0.05
δ = 0.1
δ = 0.2
I(A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
2
duration (TO-220AC, I
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-031.E-021.E-011.E+00
PAK, D2PAK)
t (s)
p
δ
=tp/T
T
tp
Figure 2: Forward voltage drop versus forward
current
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
01234567
T =125°C
j
(maximum values)
T =125°C
j
(typical values)
V (V)
FM
T =125°C
j
(maximum values)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC Insulated)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-031.E-021.E-011.E+001.E+01
t (s)
p
δ
=tp/T
T
tp
Figure 5: Peak reverse recovery current versus
/dt (typical values)
dI
F
I (A)
RM
22
V =400V
R
T =125°C
j
20
18
16
14
12
10
8
6
4
2
0
02004006008001000
I =0.5 x I
FF(AV)
I =0.25 x I
FF(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =2 x I
FF(AV)
Figure 6: Reverse recovery time versus dI
(typical values)
t (ns)
rr
120
110
100
90
80
70
60
50
40
30
20
10
0
02004006008001000
I =2 x I
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
V =400V
R
T =125°C
j
/dt
F
3/9
Page 4
STTH8R06
Figure 7: Reverse recovery charges versus
/dt (typical values)
dI
F
Q (nC)
rr
350
V =400V
R
T =125°C
j
300
250
200
150
100
50
0
02004006008001000
I =2 x I
FF(AV)
I=I
F F(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
Figure 9: Relative variations of dynamic
parameters versus junction temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
255075100125
T (°C)
j
S factor
I
RM
Q
RR
I=I
F F(AV)
V =400V
R
Reference:T =125°C
j
Figure 8: Softness factor versus dI
/dt (typical
F
values)
S factor
0.70
I2 x I
≤
F F(AV)
V =400V
R
0.65
T =125°C
j
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
02004006008001000
dI /dt(A/µs)
F
Figure 10: Transient peak forward voltage
versus dI
V (V)
FP
12
11
10
9
8
7
6
5
4
3
2
1
0
0100200300400500
/dt (typical values)
F
I=I
FF(AV)
T =125°C
j
dI /dt(A/µs)
F
Figure 11: Forward recovery time versus dI
(typical values)
t (ns)
fr
160
140
120
100
80
60
40
20
0
0100200300400500
dI /dt(A/µs)
F
4/9
I=I
F F(AV)
V =1.1 x V max.
FRF
T =125°C
j
/dt
F
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
V (V)
10
1101001000
R
F=1MHz
V =30mV
OSCRMS
T =25°C
j
Page 5
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, e
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