Datasheet STTH8006 Datasheet (ST)

Main product characteristics

STTH8006

Turbo 2 ultrafast high voltage rectifier

I

F(AV)

V

RRM

T

j

(typ) 1.02 V

V

F

(max) 70 ns

t

rr

80 A

600 V

175 °C

A

K

DO-247

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

STTH8006W

Description

The STTH8006, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode. Thanks to its low V

characteristics, this

F

device exhibits high performances in free­wheeling applications.

Table 1. Absolute ratings (limiting values, at T

Symbol Parameter Value Unit

Order Code

Part number Marking

STTH8006W STTH8006W

= 25 °C, unless otherwise specified)

amb

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

T

j

December 2006 Rev 1 1/6

Repetitive peak reverse voltage 600 V

RMS forward voltage 113 A

Average forward current Tc = 75 °C δ = 0.5 80 A

Surge non repetitive forward current tp = 10 ms sinusoidal 500 A

Storage temperature range -65 to + 175 °C

Maximum operating junction temperature 175 °C

www.st.com

6

Characteristics STTH8006

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value (max). Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 0.75 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25 °C

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

j

= 150 °C 160 1600

T

j

= V

V

R

RRM

Tj = 25 °C

IF = 80 A

= 150 °C 1.02 1.30

T

j

50

µA

1.60
V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation:
P = 0.98 x I

Table 4. Dynamic characterstics

Symbol Parameter Test conditions Min. Typ Max. Unit

t

rr

I

RM

Reverse recovery
time

Reverse recovery
current

F(AV)

+ 0.004 I

= 25°C

T

j

T

= 125°C

j

F2(RMS)

I

= 0.5 A Irr = 0.25 A IR =1 A 70

F

= 1 A dIF/dt = 50 A/µs VR =30 V 75 105

I

F

= 80 A VR = 400 V

I

F

dIF/dt = 100 A/µs

14 19 A

ns

Forward recovery

t

fr

time

V

Forward recovery

FP

voltage

= 25°C

T

j

= 25°C

T

j

I

= 80 A dIF/dt = 200 A/µs

F

VFR = 1.1 x V

= 80 A dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

Figure 1. Conduction losses versus average

forward current

P(W)

140

120

100

80

60

40

20

0

0 102030405060 708090100

δ=0.05

δ=0.1

δ=0.2

I (A)

F(AV)

2/6

δ=0.5

δ

=tp/T

δ=1

T

tp

Fmax

Fmax

600 ns

3.7 V

Figure 2. Forward voltage drop versus

forward current

I (A)

FM

200

180

160

140

120

100

80

60

40

20

0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

Tj=150°C

Tj=150°C

(Maximum values)

(Maximum values)

Tj=150°C

Tj=150°C

(Typical values)

(Typical values)

V (V)

FM

Tj=25°C

(Maximum values)

STTH8006 Characteristics

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 5. Reverse recovery time versus dIF/dt

(typical values)

t (ns)

rr

800

700

600

500

400

300

200

100

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

IF= 80A

V

=400V

R

=125°C

T

j

Figure 7. Relative variations of dynamic

parameters versus junction
temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Q

RR

t

RR

I

RM

T (°C)

j

25 50 75 100 125

IF=80A

VR=400V

Reference: Tj=125°C

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

55

IF=80A

50

V

=400V

R

T

=125°C

j

45

40

35

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dI

/dt (typical values)

F

Q (µC)

rr

3.0

IF= 80A

=400V

V

R

=125°C

T

j

2.5

2.0

1.5

1.0

0.5

dI /dt(A/µs)

0.0

0 100 200 300 400 500

F

Figure 8. Transient peak forward voltage

versus dI

V (V)

FP

8

IF=80A

T

=125°C

7

j

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

dI /dt(A/µs)

F

3/6

Package information STTH8006

Figure 9. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

100

V (V)

10

1 10 100 1000

R

V

F=1MHz

=30mV

OSC

Tj=25°C

RMS

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.8 Nm.

● Maximum torque value: 1.0 Nm.

Table 5. DO-247 dimensions

V

V

H

L5

L

L3

V2

F

G

Dia.

A

L4L2

F2

L1

F3

D

ME

DIMENSIONS

REF

Millimeters Inches

Min Typ Max Min Typ Max

A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094

G 10.90 0.429

H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216

M 2.00 3.00 0.078 0.118

V5° 5°
V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

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STTH8006 Ordering information

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

3 Ordering information

Part number Marking Package Weight Base qty Delivery mode

STTH8006W STTH8006W DO-247 4.40 g 30 Tube

4 Revision history

Date Revision Changes

15-Dec-2006 1 Initial release.

5/6

STTH8006

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