Datasheet STTH6004W Datasheet (ST)

®

Table 1: Main product characteristics

I

F(AV)

V

RRM

T

(max)

j

V

F

(max)

t

rr

(typ)

60 A

400 V

175 °C

0.83 V

50 ns

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching & conduction losses

Description

The STTH6004W uses ST 400V technology and is specially suited for use in switching power supplies, welding equipment and industrial applications, as an output rectification diode.

STTH6004W

Ultrafast high voltage rectifier

A

K

DO-247

STTH6004W

Table 2: Order codes

Part number Marking

STTH6004W STTH6004W

Table 3: Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

October 2005 REV. 1

Repetitive peak reverse voltage 400 V

RMS forward current 90 A

Average forward current Tc = 125 °C δ = 0.5 60 A

Surge non repetitive forward current tp = 10 ms sinusoidal 600 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

j

1/6

STTH6004W

Table 4: Thermal Resistance

Symbol Parameter Value (max). Unit

R

th(j-c)

Table 5: Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

I

R

V

F

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.8 x I

Table 6: Dynamic characteristics

Symbol Parameter Test conditions Min Typ Max Unit

t

I

RM

S

factor

t

V

FP

Junction to case 0.70 °C/W

* Reverse leakage current Tj = 25 °C VR = V

= 150 °C 100 1000

T

j

RRM

50 µA

** Forward voltage drop Tj = 25 °C IF = 60 A 1.2 V

= 150 °C 0.83 1.0

T

j

= 380 µs, δ < 2%

** t

p

+ 0.0033 I

Reverse recovery

rr

time

Reverse recovery current

Tj = 25 °C IF = 1 A dIF/dt = 50 A/µs VR =30 V 66 90 ns

= 1 A dIF/dt = 200 A/µs VR =30 V 36 50

I

F

Tj = 125 °C IF = 60 A VR = 200 V

/dt = 100 A/µs

dI

F

Softness factor Tj = 125 °C IF = 60 A VR = 200 V

/dt = 100 A/µs

dI

F

Forward recovery

fr

time

Forward recovery voltage

Tj = 25 °C IF = 60 A dIF/dt = 200 A/µs

V

= 1.1 x V

FR

Tj = 25 °C IF = 60 A dIF/dt = 200 A/µs

V

= 1.1 x V

FR

F(AV)

Fmax

F2(RMS)

15 A

0.4

600 ns

3.2 V

Figure 1: Conduction losses versus average forward current

P(W)

80

70

60

50

40

30

20

10

0

0 1020304050607080

d=0.05

d=0.1

I

F(AV)

d=0.2

2/6

(A)

d=0.5

d=1

T

Figure 2: Forward voltage drop versus forward current

I

(A)

FM

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VFM(V)

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

TJ=25°C

(Maximum values)

STTH6004W

Figure 3: Relative variation of thermal impedance junction to case versus pulse duration

/R

Z

th(j-c)

Single pulse

th(j-c)

tP(s)

/dt

F

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Figure 5: Reverse recovery time versus dI (typical values)

t(ns)

rr

300

250

200

IF=I

F(AV)

VR=200V T

=125°C

j

Figure 4: Peak reverse recovery current versus

/dt (typical values)

dI

F

I

(A)

RM

45

IF=I

F(AV)

40

VR=200V T

=125°C

j

35

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Figure 6: Reverse recovery charges versus dI

/dt (typical values)

F

Q(nC)

rr

3000

IF=I

F(AV)

VR=200V

2500

=125°C

T

j

2000

150

100

50

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

Figure 7: Reverse recovery softness factor versus dI

S

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

FACTOR

dIF/dt(A/µs)

IF< 2 x I

VR=200V

T

=125°C

j

F(AV)

1500

1000

500

0

0 100 200 300 400 500

dIF/dt(A/µs)

Figure 8: Relative variations of dynamic parameters versus junction temperature

1.6

S

1.4

1.2

1.0

0.8

IRM&t

0.6

0.4

0.2

0.0

25 50 75 100 125

RR

Q

RR

FACTOR

Tj(°C)

IF=I

VR=200V

Reference: T

F(AV)

=125°C

j

3/6

STTH6004W

Figure 9: Transient peak forward voltage versus dI

V

FP

8

7

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

(V)

IF=I

F(AV)

Tj=125°C

dIF/dt(A/µs)

Figure 11: Junction capacitance versus reverse voltage applied (typical values)

C(pF)

1000

V

OSC

F=1MHz

=30mV

Tj=25°C

RMS

Figure 10: Forward recovery time versus dI (typical values)

t

(ns)

fr

1000

900

800

700

600

500

400

300

200

100

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF=I

F(AV)

VFR=1.1 x VFmax.

T

=125°C

j

/dt

F

VR(V)

100

1 10 100 1000

4/6

Figure 12: DO-247 Package mechanical data

V

F2

F3

Dia

A

L2

L4

L1

D

ME

V

H

L5

L

L3

V2

F

G

STTH6004W

DIMENSIONS

REF.

A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055

F2 2.00 0.078 F3 2.00 2.40 0.078 0.094

G 10.90 0.429 H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793

L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216

M 2.00 3.00 0.078 0.118 V5° 5°

V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Table 7: Ordering information

Ordering type Marking Package Weight Base qty Delivery mode

STTH6004W STTH6004W DO-247 4.40 g 30 Tube

■ Epoxy meets UL94, V0

■ Cooling method: by conduction (C)

■ Recommended torque value: 0.8 Nm.

■ Maximum torque value: 1.0 Nm.

Table 8: Revision history

Date Revision Description of Changes

18-Oct-2005 1 First issue

5/6

STTH6004W

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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