Datasheet STTH506DTI Datasheet (ST)

®

STTH506DTI

Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

5A

600 V

Tj (max) 150 °C

(max) 2.4 V

V

F

(typ.) 3.6 A

I

RM

(typ.) 12 ns

t

rr

FEATURES AND BENEFITS

ESPECIALLY SUITED AS BOOST DIODE IN

■

CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

■ DESIGNED FOR HIGH dI

/dt OPERATION.

F

HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

■

INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

■

INSULATION (2500V

) ALLOWS

RMS

PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK

■

STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

■

Package Capacitance: C=7pF

12

2

1

Insulated TO-220AC

DESCRIPTION

The TURBOSWITCH “H” is an ultra high performance diodecomposedof two300V dicein series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at

F

/dt.

high dI

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FSM

Ipeak

T

stg

Tj

October 2003 - Ed: 2A

Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current tp = 10 ms sinusoidal Peak current waveform δ = 0.15 Tc = 140°C Storage temperature range Maximum operating junction temperature

600 V

14 A 60 A

8A

-65 +150 °C + 150 °C

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STTH506DTI

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th (j-c)

Junction to case thermal resistance

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

3.0 °C/W

*

I

R

V

F

Pulse test : * tp = 100 ms, δ <2%

Reverse leakage current V

**

Forward voltage drop I

** tp = 380 µs, δ <2%

R=VRRM

Tj = 25°C Tj = 125°C

= 5A Tj=25°C

F

Tj = 150°C

860

1.95 2.4

6µA

3.6 V

To evaluate the maximum conduction losses use the following equation : P=1.7xI

F(AV)

+ 0.14 I

F2(RMS)

DYNAMIC CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

Reverse recovery

t

rr

time

= 0.5 A Irr = 0.25 A

I

F

IR=1A I

=1A dIF/dt=-50A/µs

F

Tj = 25°C

12 ns

25

VR=30V

I

RM

S

Reverse recovery current

Reverse recovery

VR= 400 V IF=5A dIF/dt = -200 A/µs

Tj = 125°C

3.6 4.5 A

0.4 -

softness factor

Q

rr

Reverse recovery

45 nC

charges

TURN-ON SWITCHING CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

t

fr

Forward recovery time

V

FP

Transient peak

IF=5A dIF/dt = 100 A/µs

Tj = 25°C

VFR=1.1xVFmax

IF=5A dIF/dt = 100 A/µs Tj = 25°C

100 ns

7V

forward recovery voltage

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STTH506DTI

Fig.1: Conduction lossesversus averagecurrent.

P(W)

20 18 16 14 12 10

8 6 4 2 0

01234567

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ = 1

δ

=tp/T

T

tp

Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2 δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward current.

I (A)

FM

100

90 80 70 60 50 40 30 20 10

0

012345678

(typical values)

T=125°C

j

T=125°C

j

(maximum values)

V (V)

FM

T=25°C

j

(maximum values)

Fig. 4: Peak reverse recovery current versus

/dt (typical values).

dI

F

I (A)

RM

9

V =400V

R

T=125°C

j

8 7

6

5 4

3

2 1

0

0 50 100 150 200 250 300 350 400 450 500

I =0.25 x I

F F(AV)

I =0.5 x I

F F(AV)

I=I

dI /dt(A/µs)

F

F F(AV)

I =2 x I

F F(AV)

Fig. 5: Reverse recovery time versus dIF/dt (typical values).

t (ns)

rr

50 45 40 35 30 25 20 15 10

5 0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

V =400V

R

T=125°C

j

Fig. 6: Reverse recovery charges versus dIF/dt (typical values).

Q (nC)

rr

100

V =400V

R

T=125°C

j

90 80 70 60 50 40 30 20 10

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

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STTH506TDI

Fig. 7: Reverse recovery softness factor versus

/dt (typical values).

dI

F

S

0.60

I=I

F(AV)

F

V =400V

R

T=125°C

j

0.50

0.40

0.30

dI /dt(A/µs)

0.20 0 50 100 150 200 250 300 350 400 450 500

F

Fig. 9: Transient peak forward voltage versus

/dt (typical values).

dI

F

V (V)

FP

16

I=I

F F(AV)

15

T=125°C

j

14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Fig. 8: Relative variation of dynamic parameters

versusjunction temperature (reference:Tj = 125°C).

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00 25 50 75 100 125

S

I

RM

T (°C)

j

I=I

F F(AV)

V =400V

R

Reference:T =125°C

j

Fig. 10: Forward recovery time versus dIF/dt (typical values).

t (ns)

fr

200 180 160 140 120 100

80 60 40 20

0

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.1 x V max.

FR F

T=125°C

j

Fig. 11: Junction capacitance versus reverse voltage applied (typical values).

C(pF)

100

10

V (V)

1

1 10 100 1000

R

4/5

F=1MHz

V =30mV

OSC

T=25°C

j

RMS

PACKAGE MECHANICAL DATA

TO-220AC

STTH506DTI

B

C

b2

REF.

Millimeters Inches

DIMENSIONS

Min. Typ. Max. Min. Typ. Max.

L

I

A

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

F

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

l4

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

a1

l2

a2

c2

c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107

e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

b1

e

M

c1

L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 M 2.60 0.102

Ordering code Marking Package Weight Base qty Delivery mode

STTH506DTI STTH506DTI TO-220AC 2.3 g. 50 Tube

■

Cooling method: C

■

Recommended torque value: 0.8 N.m.

■

Maximum torque value: 1 N.m.

■

Epoxy meets UL94,V0

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