Datasheet STTH3R06 Datasheet (ST)

®

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Table 1: Main Product Characteristics

I

F(AV)

V

I

(max)

R

V

F

(typ)

t

rr

RRM

T

j

(typ)

3 A

600 V

100 µA

175°C

1.0 V

35 ns

STTH3R06

KA

FEATURES AND BENEFITS

■ Ultrafast switching

■ Low forward voltage drop

■ Low thermal resistance

■ Low leakage current (platinium doping)

DESCRIPTION

The STTH3R06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, inverters and as a free wheeling diode.

Table 2: Order Codes

Part Number Marking

STTH3R06 STTH3R06 STTH3R06RL STTH3R06 STTH3R06U 3R6U STTH3R06S R6S

SMB

STTH3R06U

DO-201AD STTH3R06

SMC

STTH3R06S

September 2005 REV. 3

1/9

STTH3R06

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

Table 4: Thermal Parameters

Symbol Parameter Maximum Unit

R

th(j-l)

R

th(j-a)

Repetitive peak reverse voltage 600 V

RMS forward current 10 A

Average forward current δ = 0.5

DO-201AD Tl = 80°C 3 A

SMB Tl = 55°C

SMC Tl = 80°C

Surge non repetitive forward current DO-201AD tp = 10ms

SMB / SMC 45

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

j

sinusoidal

55 A

Junction to lead DO-201AD L = 10 mm 20 °C/W

SMB 25

SMC 20

Junction to ambient (see fig. 13) DO-201AD L = 10 mm 75 °C/W

Table 5: Static Electrical Characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

I

V

To evaluate the conduction losses use the following equation: P = 1.03 x I

Reverse leakage current Tj = 25°C VR = V

R

= 150°C 15 100

T

j

Forward voltage drop Tj = 25°C IF = 3A 1.7 V

F

= 150°C 1.0 1.25

T

j

F(AV)

RRM

+ 0.09 I

F2(RMS)

3µA

Table 6: Dynamic Characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

t

Reverse recovery

rr

time

t

Forward recovery

fr

time

V

Forward recovery

FP

Tj = 25°C IF = 0.5A IRR = 0.25A IR = 1A 30 ns

I

= 1A dIF/dt = -50 A/µs VR =30V 35

F

Tj = 25°C IF = 3A dIF/dt = 100 A/µs

= 1.1 x V

V

FR

Fmax

100 ns

IF = 3A dIF/dt = 100 A/µs 10 V

voltage

2/9

STTH3R06

Figure 1: Conduction losses versus average current

P(W)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy printed circuit FR4, L

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

SMB

S = 1cm

Cu

SMC

S = 1cm

Cu

2

= 10mm, SCU=1cm2)

leads

DO-201AD

L = 10mm

leads

t (s)

p

Figure 2: Forward voltage drop versus forward current

I (A)

FM

50

45

40

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

(typical values)

T =150°C

j

T =150°C

j

(maximum values)

V (V)

FM

T =25°C

j

(maximum values)

Figure 4: Peak reverse recovery current versus dI

I (A)

RM

13

V =400V

R

12

T =125°C

j

11

10

9

8

7

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

I=I

FF(AV)

I =0.5 x I

FF(AV)

I =0.25 x I

F F(AV)

dI /dt(A/µs)

F

I =2 x I

FF(AV)

Figure 5: Reverse recovery time versus dI (typical values)

t (ns)

rr

160 150 140 130 120 110 100

90 80 70 60 50 40 30 20 10

0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

dI /dt(A/µs)

F

I=I

F F(AV)

V =400V

R

T =125°C

j

I =0.5 x I

F F(AV)

/dt

F

Figure 6: Reverse recovery charges versus dI

/dt (typical values)

F

Q (nC)

rr

450

V =400V

R

T =125°C

j

400

I =2 x I

350

FF(AV)

300

250

200

150

I=I

FF(AV)

I =0.5 x I

FF(AV)

100

50

0

dI /dt(A/µs)

F

0 50 100 150 200 250 300 350 400 450 500

3/9

STTH3R06

Figure 7: Softness factor versus dIF/dt (typical values)

S factor

3.0

I=I

F F(AV)

V =400V

R

T =125°C

j

2.5

2.0

1.5

1.0

0.5

dI /dt(A/µs)

0.0

0 50 100 150 200 250 300 350 400 450 500

F

Figure 9: Transient peak forward voltage versus dI

V (V)

FP

20

I=I

F F(AV)

18

T =125°C

16

14

12

10

8

6

4

2

0

0 20 40 60 80 100 120 140 160 180 200

/dt (typical values)

F

j

dI /dt(A/µs)

F

Figure 8: Relative variations of dynamic parameters versus junction temperature

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

Q

RR

25 50 75 100 125

Figure 10: Forward recovery time versus dI

S factor

I

RM

I=I

F F(AV)

V =400V

R

Reference:T =125°C

j

T (°C)

j

/dt

F

(typical values)

t (ns)

fr

200

180

160

140

120

100

80

60

40

20

0

0 20 40 60 80 100 120 140 160 180 200

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.1 x V max.

FR F

T =125°C

j

Figure 11: Junction capacitance versus reverse voltage applied (typical values)

C(pF)

100

10

V (V)

1

1 10 100 1000

R

4/9

F=1MHz

V =30mV

OSC RMS

T =25°C

j

Figure 12: Thermal resistance junction to ambient versus copper surface under lead (epoxy FR4, e

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

012345678910

=35µm) (DO-201AD)

CU

DO-201AD

S (cm²)

CU

STTH3R06

Figure 13: Thermal resistance junction to ambient versus copper surface under lead (epoxy FR4, e

R (°C/W)

th(j-a)

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

=35µm) (SMB / SMC)

CU

SMB

SMC

S (cm²)

CU

Figure 14: Thermal resistance versus lead length

R (°C/W)

th

100

90

80

70

60

50

40

30

20

10

0

5 10152025

R

th(j-a)

R

th(j-l)

L (mm)

lead

DO-201AD

5/9

STTH3R06

Figure 15: SMB Package Mechanical Data

DIMENSIONS

E1

D

E

A1

C

L

A2

Figure 16: SMB Foot Print Dimensions

(in millimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

b

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

1.52 2.75

2.3

1.52

6/9

Figure 17: SMC Package Mechanical Data

STTH3R06

DIMENSIONS

E1

D

E

A1

C

L

A2

Figure 18: SMC Foot Print Dimensions

(in millimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126

c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321

E1 6.60 7.15 0.260 0.281

E2 4.40 4.70 0.173 0.185

b

D 5.55 6.25 0.218 0.246

L 0.75 1.60 0.030 0.063

2.0 4.2 2.0

3.3

7/9

STTH3R06

Figure 19: DO-201AD Package Mechanical Data

BA

B

ØC

REF.

DIMENSIONS

Millimeters Inches

note 1

E

note 1

E

Min. Max. Min. Max.

A9.500.374 B 25.40 1.000 C5.300.209 D1.300.051

ØD ØD

note 2

E 1.25 0.049

1 - The lead diameter ø D is not controlled over zone E

NOTES

2 - The minimum axial length within which the device may be placed with its leads bent at right angles is

0.59"(15 mm)

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

.

Table 7: Ordering Information

Ordering type Marking Package Weight Base qty

Delivery

mode

STTH3R06 STTH3R06 DO-201AD 1.12 g 600 Ammopack

STTH3R06-RL STTH3R06 DO-201AD 1.12 g 1900 Tape & reel

STTH3R06U 3R6U SMB 0.11 g 2500 Tape & reel STTH3R06S R6S SMC 0.243 g 2500 Tape & reel

■ Epoxy meets UL94, V0

■ Band indicated cathode (DO-201AD)

■ Bending method: see application note AN1471 (DO-201AD)

Table 8: Revision History

Date Revision Description of Changes

March-2003 1 First issue

07-Sep-2004 2 SMB and SMC packages added

14-Oct-2005 3 Changed marking of STTH3R06U from R06U to 3R6U on

page 1. Added ECOPACK statement.

8/9

STTH3R06

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

STMicroelectronics group of companies

www.st.com

9/9