Datasheet STTH3006DPI Datasheet (ST)

®

Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max) 150 °C

(max) 2.4 V

V

F

(typ.) 6.7 A

I

RM

(typ.) 25 ns

t

rr

FEATURES AND BENEFITS

ESPECIALLY SUITED AS BOOST DIODE IN

■

CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

■ DESIGNED FOR HIGH dI

HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

■

INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

■

INSULATION (2500V PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK.

■

STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

■

PACKAGE CAPACITANCE: C=16pF

30 A

600 V

/dt OPERATION.

F

) ALLOWS

RMS

STTH3006DPI

12

2

1

DOP3I

(insulated)

DESCRIPTION

The TURBOSWITCH “H” is an ultra high performance diode composedof two300V dice in series. TURBOSWITCH “H”family drastically cuts losses in the associated MOSFET when run at

F

/dt.

high dI

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FSM

Ipeak

T

stg

Tj

October 2003 - Ed: 2A

Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current tp = 10 ms sinusoidal Peak current waveform δ = 0.15 Tc = 120°C Storage temperature range Maximum operating junction temperature

600 V

32 A

180 A

50 A

-65 +150 °C + 150 °C

1/5

STTH3006DPI

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th (j-c)

Junction to case thermal resistance

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

1.3 °C/W

*

I

R

V

F

Pulse test: * tp =100ms, δ <2%

Reverse leakage current V

**

Forward voltage drop I

** tp = 380 µs, δ <2%

R=VRRM

Tj = 25°C Tj = 125°C

= 30A Tj=25°C

F

Tj = 150°C

60 400

1.95 2.4

40 µA

3.6 V

To evaluate the maximum conduction losses use the following equation : P=1.7xI

F(AV)

+ 0.023 I

F2(RMS)

DYNAMIC CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

t

rr

Reverse recovery time

IF= 0.5 A Irr = 0.25 A IR=1A

I

=1A dIF/dt=-50A/µs

F

Tj = 25°C

25 ns

45

VR=30V

I

RM

S

Reverse recovery current

Reverse recovery

VR= 400 V IF=30A dIF/dt = -200 A/µs

Tj = 125°C

6.7 8.5 A

0.3 -

softness factor

Q

rr

Reverse recovery

145 nC

charges

TURN-ON SWITCHING CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

t

fr

Forward recovery time

V

FP

Transient peak

IF=30A dIF/dt = 100 A/µs

Tj = 25°C

VFR=1.1xVFmax

IF=30A dIF/dt = 100 A/µs Tj= 25°C

400 ns

6V

forward recovery voltage

2/5

STTH3006DPI

Fig.1: Conductionlossesversus average current.

P(W)

110 100

90 80 70 60 50 40 30 20 10

0

0 5 10 15 20 25 30 35 40

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ = 1

δ

=tp/T

T

tp

Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2 δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward current.

I (A)

FM

200 180 160 140 120 100

80 60 40 20

0

012345678

(maximum values)

T=125°C

j

(typical values)

T=125°C

j

V (V)

FM

T=25°C

j

(maximum values)

Fig. 4: Peak reverse recovery current versus

/dt (typical values).

dI

F

I (A)

RM

16

V =400V

R

T=125°C

j

14

12

I =0.5 x I

I =0.25 x I

F F(AV)

10

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

I=I

F F(AV)

dI /dt(A/µs)

F

I =2 x I

F F(AV)

Fig. 5: Reverse recovery time versus dIF/dt (typical values).

t (ns)

rr

90

80

I =2 x I

70

60

50 40

30

20 10

0

0 50 100 150 200 250 300 350 400 450 500

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

V =400V

R

T=125°C

j

Fig. 6: Reverse recovery charges versus dIF/dt (typical values).

Q (nC)

rr

300

V =400V

R

275

T=125°C

j

250 225 200 175 150 125 100

75 50 25

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

3/5

STTH3006DPI

Fig. 7: Reverse recovery softness factor versus

/dt (typical values).

dI

F

S

0.40

I=I

F(AV)

F

V =400V

R

T=125°C

j

0.35

0.30

0.25

dI /dt(A/µs)

0.20 0 50 100 150 200 250 300 350 400 450 500

F

Fig. 9: Transient peak forward voltage versus

/dt (typical values).

dI

F

V (V)

FP

12

I=I

F F(AV)

11

T=125°C

j

10

9 8 7 6 5 4 3 2 1 0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Fig. 8: Relative variation of dynamic parameters

versusjunctiontemperature (reference: Tj=125°C).

3.00

2.75

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00 25 50 75 100 125

S

I

RM

T (°C)

j

I=I

F F(AV)

V =400V

R

Reference:T =125°C

j

Fig. 10: Forward recovery time versus dIF/dt (typical values).

t (ns)

fr

800

I=I

700

600

500

400

300

200

100

0

0 100 200 300 400 500

dI /dt(A/µs)

F

F F(AV)

V =1.1 x V max.

FR F

T=125°C

j

Fig. 11: Junction capacitance versus reverse voltage applied (typical values).

C(pF)

1000

100

V (V)

10

1 10 100 1000

R

4/5

F=1MHz

V =30mV

OSC

T=25°C

j

RMS

PACKAGE MECHANICAL DATA

DOP3I

STTH3006DPI

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144

L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P 1.20 1.40 0.047 0.055 R 4.60 typ. 0.181 typ.

Ordering code Marking Package Weight Base qty Delivery mode

STTH3006DPI STTH3006DPI DOP3I 4.46 g. 30 Tube

■

Epoxy meets UL94,V0

Informationfurnished is believedto be accurateandreliable. However, STMicroelectronicsassumes no responsibilityforthe consequences of useof such informationnor for anyinfringement of patentsor other rightsof third partieswhich may resultfrom its use.Nolicense is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany -

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain -

Sweden - Switzerland - United Kingdom - United States

www.st.com

5/5