TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
PackagedinTO-220AB,ISOWATT220AB,
TO-220FPAB, I
2
PAK or D2PAK, this device is
especially intended for secondary rectification.
K
A2
A1
D2PAK
STTH2003CG
A1
TO-220AB
STTH2003CT
A1
TO-220FPAB
STTH2003CFP
A1
K
A2
A2
K
A1
I2PAK
A2
K
A2
K
STTH2003CR
K
A1
ISOWATT220AB
STTH2003CF
A2
ABSOLUTE RATINGS (limiting values, per diode)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
currentδ = 0.5
I
FSM
I
RSM
T
stg
Tj
August 2003 - Ed: 7D
Surge non repetitive forward currenttp = 10 ms sinusoidal
Non repetitive avalanche currenttp = 20 µs square
Storage temperature range
Maximum operating junction temperature
TO-220AB / D2PAK /
I2PAK
ISOWATT220AB
TO-220FPAB
Tc=140°CPer diode
Per device
Tc=125°C
Tc=115°C
300V
30A
10
20
110A
5A
-65 + 175°C
175°C
A
1/8
Page 2
STTH2003CT/CG/CF/CR/CFP
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th (j-c)
Junction to caseTO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
R
th (c)
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
STATIC ELECTRICAL CHARACTERISTICS (per diode)
SymbolParameterTests conditionsMin.Typ.Max.Unit
Per diode2.5°C/W
Total1.3
Per diode3.9
Total3.2
Per diode4.6
Total4
Coupling0.1
Coupling2.5
Coupling3.5
*
I
R
Reverse leakage
current
V
**
F
Forward voltage dropI
= 300 VTj = 25°C
V
R
Tj = 125°C
= 10 ATj = 25°C
F
Tj = 125°C
30300
0.851
20µA
1.25V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.75xI
F(AV)
+ 0.025 I
F2(RMS)
RECOVERY CHARACTERISTICS
SymbolTests conditionsMin.Typ.Max.Unit
25ns
35
230ns
3.5V
8A
S
trr
tfr
V
FP
factor
I
RM
= 0.5 AIrr= 0.25 AIR=1ATj=25°C
I
F
I
=1AdIF/dt=-50A/µsVR=30V
F
I
=10AdIF/dt = 100 A/µs
F
Tj=25°C
VFR=1.1xVFmax.
Vcc = 200VIF=10A
Tj = 125°C
dIF/dt = 200 A/µs
0.3-
2/8
Page 3
STTH2003CT/CG/CF/CR/CFP
Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
14
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
12
10
8
δ = 1
6
δ
=tp/T
T
tp
4
2
0
024681012
IF(av) (A)
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
2
PAK/I2PAK).
/D
Zth(j-c)/Rth(j-c)
1.0
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
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