Datasheet STTH2003CR, STTH2003CFP Datasheet (ST)

Page 1
®
STTH2003CT/CG/CF/CR/CFP
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x10A
300 V
Tj (max) 175 °C
(max) 1 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
COMBINES HIGHEST RECOVERY AND
■
REVERSE VOLTAGE PERFORMANCE
■ ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY INSULATED PACKAGES: ISOWATT220AB,
■
TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters.
2
PAK or D2PAK, this device is
especially intended for secondary rectification.
K
A2
A1
D2PAK
STTH2003CG
A1
TO-220AB
STTH2003CT
A1
TO-220FPAB
STTH2003CFP
A1
K
A2
A2
K
A1
I2PAK
A2
K
A2
K
STTH2003CR
K
A1
ISOWATT220AB
STTH2003CF
A2
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage RMS forward current Average forward
current δ = 0.5
I
FSM
I
RSM
T
stg
Tj
August 2003 - Ed: 7D
Surge non repetitive forward current tp = 10 ms sinusoidal Non repetitive avalanche current tp = 20 µs square Storage temperature range Maximum operating junction temperature
TO-220AB / D2PAK / I2PAK
ISOWATT220AB TO-220FPAB
Tc=140°C Per diode
Per device
Tc=125°C Tc=115°C
300 V
30 A 10
20
110 A
5A
-65 + 175 °C 175 °C
A
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STTH2003CT/CG/CF/CR/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
R
th (c)
TO-220AB / D2PAK / I2PAK ISOWATT220AB TO-220FPAB
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
Per diode 2.5 °C/W
Total 1.3
Per diode 3.9
Total 3.2
Per diode 4.6
Total 4
Coupling 0.1 Coupling 2.5 Coupling 3.5
*
I
R
Reverse leakage current
V
**
F
Forward voltage drop I
= 300 V Tj = 25°C
V
R
Tj = 125°C
= 10 A Tj = 25°C
F
Tj = 125°C
30 300
0.85 1
20 µA
1.25 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation : P=0.75xI
F(AV)
+ 0.025 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
25 ns 35
230 ns
3.5 V
8A
S
trr
tfr
V
FP
factor
I
RM
= 0.5 A Irr= 0.25 A IR=1A Tj=25°C
I
F
I
=1A dIF/dt=-50A/µsVR=30V
F
I
=10A dIF/dt = 100 A/µs
F
Tj=25°C
VFR=1.1xVFmax. Vcc = 200V IF=10A
Tj = 125°C
dIF/dt = 200 A/µs
0.3 -
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Page 3
STTH2003CT/CG/CF/CR/CFP
Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
14
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
12 10
8
δ = 1
6
δ
=tp/T
T
tp
4 2 0
024681012
IF(av) (A)
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
2
PAK/I2PAK).
/D
Zth(j-c)/Rth(j-c)
1.0
Fig. 2: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
200 100
Tj=125°C
Tj=25°C
10
Tj=75°C
1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
VFM(V)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration (ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
0.0
Single pulse
tp(s)
1E-3 1E-2 1E-1 1E+0
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence, per diode).
dI
F
IRM(A)
16
VR=200V
14
Tj=125°C
12 10
8 6 4 2 0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
tp(s)
0.0 1E-2 1E-1 1E+0 1E+1
δ
=tp/T
T
tp
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns)
100
80
60
IF=IF(av)
IF=2*IF(av)
40
20
IF=0.5*IF(av)
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
VR=200V Tj=125°C
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Page 4
STTH2003CT/CG/CF/CR/CFP
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
S factor
0.60
VR=200V
0.50
0.40
0.30
0.20
0.10
0.00 0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Tj=125°C
Fig. 8: Transient peak forward voltage versus
/dt (90% confidence, per diode) (TO-220AB).
dI
F
V (V)FP
10
IF=IF(av) Tj=125°C
8
6
Fig. 7: Relative variation of dynamic parameters versusjunction temperature (reference:Tj = 125°C).
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 25 50 75 100 125
S factor
IRM
Tj(°C)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
t (ns)fr
500
VFR=1.1*VF max.
400
300
IF=IF(av) Tj=125°C
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)
2
PAK).
(D
Rth(j-a) (°C/W)
80 70 60 50 40 30 20 10
0
0 5 10 15 20 25 30 35 40
S(Cu) (cm²)
200
100
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
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Page 5
PACKAGE MECHANICAL DATA
2
PAK
D
E
L2
L
L3
A1
B2 B
G
C2
STTH2003CT/CG/CF/CR/CFP
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
C
R
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
A2
R 0.40 typ. 0.016typ.
V2 0° 8° 0° 8°
Millimeters Inches
Min. Max. Min. Max.
M
*
* FLAT ZONE NO LESS THAN 2mm
FOOT PRINT DIMENSIONS (in millimeters)
2
PAK
D
16.90
10.30
1.30
8.90
3.70
V2
5.08
5/8
Page 6
STTH2003CT/CG/CF/CR/CFP
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
PACKAGE MECHANICAL DATA
TO-220AB
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
L2
6/8
F2 F1
F
G1
H2
Dia
G
L5
L9
L6
L4
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116
M
E
L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102typ.
Diam. 3.75 3.85 0.147 0.151
Page 7
PACKAGE MECHANICAL DATA
TO-220FPAB
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F2
F
STTH2003CT/CG/CF/CR/CFP
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A
B
L7
E
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
7/8
Page 8
STTH2003CT/CG/CF/CR/CFP
PACKAGE MECHANICAL DATA
2
PAK
I
E
L2
L1
L
b2 b1
c2
D
A1
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055
b
c
e
Ordering code Marking Package Weight Base qty
Delivery
mode
STTH2003CT STTH2003CT TO-220AB 2.2 g 50 Tube
STTH2003CG STTH2003CG D
2
PAK 1.48 g 50 Tube
STTH2003CG-TR STTH2003CG D2PAK 1.48 g 500 Tape & reel
STTH2003CF STTH2003CF ISOWATT220AB 2.08 g 50 Tube
STTH2003CFP STTH2003CFP TO-220FPAB 2.08 g 50 Tube
STTH2003CR STTH2003CR I
■
Cooling method: by conduction (C)
■
Recommended torque value: 0.55 N.m.
■
Maximum torque value: 0.70 N.m.
■
Epoxy meets UL 94,V0
Informationfurnishedisbelievedtobeaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of useofsuch information nor for any infringement of patents or other rights of third partieswhichmay result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au­thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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2
PAK 1.49 g 50 Tube
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