Datasheet STTH1506DPI Datasheet (ST)

®

Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max) 150 °C

(max) 2.4 V

V

F

(typ.) 4.8 A

I

RM

(typ.) 16 ns

t

rr

FEATURES AND BENEFITS

ESPECIALLY SUITED AS BOOST DIODE IN

■

CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

■ DESIGNED FOR HIGH DI/DT OPERATION.

HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

■ INTERNAL CERAMIC INSULATED DEVICES

WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

■

INSULATION (2500V PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK

■

STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

■

PACKAGE CAPACITANCE: C=16pF

15 A

600 V

) ALLOWS

RMS

STTH1506DPI

12

2

1

DOP3I

(insulated)

DESCRIPTION

The TURBOSWITCH “H” is an ultra high performance diodecomposedof two300V dicein series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at

F

/dt.

high dI

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FSM

Ipeak

T

stg

Tj

October 2003 - Ed: 2A

Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current tp = 10 ms sinusoidal Peak current waveform δ = 0.15 Tc = 120°C Storage temperature range Maximum operating junction temperature

600 V

26 A

130 A

35 A

-65 +150 °C + 150 °C

1/5

STTH1506DPI

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th (j-c)

Junction to case

STATIC ELECTRICAL CHARACTERISTICS (for both diodes)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

1.6 °C/W

*

I

R

Reverse leakage current

V

**

F

Pulse test: * tp = 100ms, δ <2%

Forward voltage drop I

** tp = 380µs, δ <2%

V

R=VRRM

Tj = 25°C Tj = 125°C

= 15A Tj=25°C

F

Tj = 150°C

30 200

1.95 2.4

20 µA

3.6 V

To evaluate the maximum conduction losses use the following equation: P=1.7xI

F(AV)

+ 0.047 x I

F2(RMS)

RECOVERY CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

t

rr

Reverse recovery time

IF= 0.5 A Irr = 0.25A IR=1A

I

=1A dIF/dt = - 50A/µs

F

Tj = 25°C

16 ns

35

VR=30V

I

RM

Reverse recovery current

VR= 400 V IF=15A dIF/dt = -200 A/µs

Tj = 125°C

4.8 6.0 A

S

Reverse recovery

0.4 -

softness factor

Q

rr

Reverse recovery

80 nC

charges

TURN-ON SWITCHING CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

t

fr

V

FP

Forward recovery time

Forward

IF=15A dIF/dt = 100A/µs,

Tj = 25°C

VFR=1.1xVFmax IF=15A dIF/dt = 100 A/µs Tj = 25°C

200 ns

6V

recovery voltage

2/5

STTH1506DPI

Fig.1: Conduction lossesversus average current.

P(W)

55 50 45 40 35 30 25 20 15 10

5 0

02468101214161820

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ = 1

=tp/T

δ

T

tp

Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

δ = 0.2

0.4

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01

t (s)

p

δ

=tp/T

T

tp

1.E+00

Fig. 2: Forward voltage drop versus forward current.

I (A)

FM

130 120 110 100

90 80 70 60 50 40 30 20 10

0

012345678

(maximum values)

T=125°C

j

(typical values)

T=125°C

j

(maximum values)

V (V)

FM

T=25°C

j

Fig.4: Peak reverserecovery current versus dIF/dt (typical values).

I (A)

RM

20

V =400V

R

18

T=125°C

j

16

I =0.5 x I

I =0.25 x I

F F(AV)

dI /dt(A/µs)

F

14 12 10

8 6 4 2 0

0 200 400 600 800 1000

I=I

F F(AV)

I =2 x I

F F(AV)

Fig. 5: Reverse recovery time versus dIF/dt (typical values).

t (ns)

rr

70

60

50

40

30

20

10

0

0 200 400 600 800 1000

I =2 x I

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

V =400V

R

T=125°C

j

Fig. 6: Reverse recovery charges versus dIF/dt (typical values).

Q (nC)

rr

240

V =400V

R

220

T=125°C

j

200 180 160 140 120 100

80 60 40 20

0

0 200 400 600 800 1000

dI /dt(A/µs)

F

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

3/5

STTH1506DPI

Fig. 7: Softness factor versus dIF/dt (typical

values).

S

0.80

I=I

F(AV)

F

V =400V

R

T=125°C

j

0.70

0.60

0.50

0.40

0.30

0.20 0 200 400 600 800 1000

dI /dt(A/µs)

F

Fig. 9: Transient peak forward voltage versus

/dt (typical values).

dI

F

V (V)

FP

12

I=I

F F(AV)

11

T=125°C

j

10

9 8 7 6 5 4 3 2 1 0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Fig. 8: Relative variations of dynamic parameters

versus junction temperature.

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00 25 50 75 100 125

S

I

RM

T (°C)

j

I=I

F F(AV)

V =400V

R

Reference:T =125°C

j

Fig. 10: Forward recovery time versus dIF/dt (typical values).

t (ns)

fr

350

I=I

300

250

200

150

100

50

0

0 100 200 300 400 500

dI /dt(A/µs)

F

F F(AV)

V =1.1 x V max.

FR F

T=125°C

j

Fig. 11: Junction capacitance versus reverse voltage applied (typical values).

C(pF)

1000

100

V (V)

10

1 10 100 1000

R

4/5

F=1MHz

V =30mV

OSC

T=25°C

j

RMS

PACKAGE MECHANICAL DATA

DOP3I

STTH1506DPI

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P 1.20 1.40 0.047 0.055 R 4.60 typ. 0.181 typ.

Ordering code Marking Package Weight Base qty Delivery mode

STTH1506DPI STTH1506DPI DOP3I 4.46 g. 30 Tube

■

Epoxy meets UL94,V0

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