Datasheet STTH1302CT Datasheet (ST)

®

STTH1302CT/CG/CFP

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

2 x 6.5 A

200 V

Tj (max) 175 °C

V

(max) 0.95V

F

trr (max) 25 ns

FEATURES AND BENEFITS

Suited for SMPS

■

Low losses

■

Low forward and reverse recovery times

■

High surge current capability

■

■ High junction temperature

■ Insulated package: TO-220FPAB:

Insulation voltage = 2000 V

DC

Capacitance = 12 pF

DESCRIPTION

Dual center tap rectifier suited for Switch
ModePowerSuppliesandhighfrequencyDCto
DC converters.

This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.

A1

A2

K

TO-220AB

STTH1302CT

TO-220FPAB

STTH1302CFP

A1

A1

K

A2

K

K

A2

A1

D2PAK

STTH1302CG

A2

K

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 200 V
RMS forward current 20 A
Average forward

current δ = 0.5

TO-220AB / Tc = 155°C Per diode 6.5 A

2

D

PAK Tc = 145°C Per device 13

TO-220FPAB Tc = 135°C Per diode 6.5 A

Tc = 110°C Per device 13

I

FSM

T

stg

Surge non repetitive forward current tp = 10 ms sinusoïdal 70 A
Storage temperature range -65 to+175 °C

Tj Maximum operating junction temperature 175 °C

October 2003 - Ed: 2A

1/7

STTH1302CT/CG/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

R

th (c)

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

I

R

V

Junction to case TO-220AB / D2PAK Per diode 3 °C/W

TO-220FPAB 5.5
TO-220AB / D

2

PAK Total 1.9 °C/W

TO-220FPAB 4.5

Coupling TO-220AB / D2PAK 0.8 °C/W

TO-220FPAB 3.5

(Per diode) + P(diode 2) x R

th(j-c)

* Reverse leakage Current Tj = 25°C VR=V

th(c)

RRM

6 µA

Tj = 125°C 3 60

** Forward Voltage drop Tj= 25°C IF= 6.5 A 1.1 V

F

Tj = 125°C I
Tj = 25°C I
Tj = 125°C I

= 6.5 A 0.81 0.95

F

= 13 A 1.25

F

= 13 A 0.95 1.1

F

Pulse test : * tp=5ms,δ<2%

** tp = 380 µs, δ <2%

To evaluate the conduction losses use the following equation :
P=0.80xI

F(AV)

+ 0.023 x I

F2(RMS)

DYNAMIC CHARACTERISTICS (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

trr Reverse recovery time Tj = 25°C I

= 0.5 A

F

16 25 ns
Irr = 0.25 A
IR=1A

tfr Forward recovery time Tj = 25°C I

= 6.5 A

F

70 ns
dIF/dt = 100 A/µs
VFR=1.1xVFmax

V

FP

Forward recovery voltage Tj = 25°C IF= 6.5 A

2.2 V

dIF/dt = 100 A/µs

2/7

STTH1302CT/CG/CFP

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

P (W)F(AV)

8

7

6

5

4

3

2

1

0

012345678

δ = 0.05

δ = 0.1

I (A)F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3: Forward voltage drop versus forward cur­rent (per diode).

I (A)FM

100.0

T=125°C

j

Typical values

T=125°C

10.0

1.0

j

Maximum values

T=25°C

j

Maximum values

Fig. 2: Peak current versus factor (per diode).

I (A)M

60

T

I

50

40

30

20

10

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=2W

P=10W

P=5W

δ

M

δ

=tp/T

tp

Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /

2

P AK).

D

Zth / Rth(j-c) (j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).

Zth / Rth(j-c) (j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

V (V)FM

Single pulse

tp(s)

0.1

1.E-02 1.E-01 1.E+00 1.E+01

δ

=tp/T

T

tp

tp(s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00

δ

=tp/T

tp

Fig. 5-1: Non repetitive surge peak forward cur­rent versus overload duration per diode
(TO-220AB / D

I (A)M

100

90
80
70
60
50
40
30
20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

2

PAK).

T =25°CC

T =75°CC

T =125°CC

t

t(s)

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STTH1302CT/CG/CFP

Fig. 5-2:Non repetitive surge peakforwardcurrent

versus overload duration per diode
(TO-220FPAB).

I (A)M

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

T =25°CC

T =75°CC

T =125°CC

Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).

C(nF)

100

V (V)R

10

1 10 100 1000

F=1MHz

V =30V

OSC RMS

Tj=25°C

Fig. 6: Average forward current versus ambient tem­perature (δ=0.5, per diode).

I (A)F(AV)

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125 150 175

Rth =Rth(j-a) (j-c)

D²PAK (S=1cm²)

(j-a)

Rth =50°C/W

TO-220FPAB

T (°C)amb

TO-220AB/D²PAK

Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).

Q (nC)RR

240

I =6.5A

F

220

R

V =200V

200
180
160
140
120
100

80
60
40
20

0

10 100 1000

T=125°Cj

Tj=25°C

dI /dt(A/µs)F

Fig. 9: Reverse recovery time versus dIF/dt (90%

confidence, per diode).

trr(ns)

80

70

60

50

40

30

20

10

0

10 100 1000

Tj=25°C

T=125°Cj

dI /dt(A/µs)F

4/7

I =6.5A

F
R

V =100V

Fig. 10: Reverse recovery current versus dIF/dt
(90% confidence, per diode).

I (A)RM

12

I =6.5A

F
R

V =100V

10

8

6

4

2

0

10 100 1000

dI /dt(A/µs)F

T=125°Cj

Tj=25°C

STTH1302CT/CG/CFP

Fig. 11: Dynamic parameters versus junction tem-

perature.

Q ;I [T ]/Q ;I [T =125°C]RR RM j RR RM j

1.4

I =6.5A

F
R

V =100V

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

Tj(°C)

IRM

QRR

PACKAGE MECHANICAL DATA

TO-220AB

A

C

D

M

L2

F2
F1

H2

Dia

L5

L6

L9

L4

F

G1

G

Fig. 12: Thermal resistance junction to ambient ver-

sus copper surface under tab (epoxy printed board
FR4, Cu = 35µm)(D

Rth (°C/W)(j-a)

80

70

60

50

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20

2

PAK).

S(cm²)

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

L7

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.

E

L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

5/7

STTH1302CT/CG/CFP

PACKAGE MECHANICAL DATA

2

PAK

D

E

L2

L

L3

A1

B2
B

G

* FLAT ZONE NO LESS THAN 2mm

C2

REF. DIMENSIONS

Millimeters Inches

A

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

A2

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

M

*

V2

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

FOOTPRINT

10.30

6/7

16.90

5.08

1.30

3.70

8.90

PACKAGE MECHANICAL DATA

TO-220FPAB

H

L6

L2

L3

L5

L4

G1

G

F1

F2

F

Dia

D

STTH1302CT/CG/CFP

REF. DIMENSIONS

Millimeters Inches

A

B

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039

F1 1.15 1.70 0.045 0.067

L7

F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417

E

L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646

L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

Min. Max. Min. Max.

Ordering type Marking Package Weight Base qty Delivery mode

STTH1302CT STTH1302CT TO-220AB 2.20 g 50 Tube

STTH1302CFP STTH1302CFP TO-220FPAB 2.0 g 50 Tube

STTH1302CG STTH1302CG D

STTH1302CG-TR STTH1302CG D

■

Epoxy meets UL94,V0

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