Page 1
TOP VIEW
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0
0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX.
K 0° 10°
E 1.90 REF.
L
0.95 REF.
F 0.30 0.50
B
L
F
HC
J
D G
K
A
E
1
2 3
4
5
6
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
STT6802 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
STT6802
3.3A , 30V , R
N-Channel Enhancement Mode MOSFET
65 mΩ
DS(ON)
TSOP-6
ΩΩΩ
MARKING
6802
Date Code
REF.
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current 1 IDM 10 A
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C 2.6
3.3
A
Power Dissipation TA=25°C PD 1.14 W
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range TJ, T
-55~150 °C
STG
Thermal Resistance Rating
Maximum Junction to Ambient 3 R
110 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 1 of 4
Page 2
STT6802
3.3A , 30V , R
Elektronische Bauelemente
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 2 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
30 - - V VGS=0, ID=250uA
1.0 - 2.5 V VDS=VGS, ID=250uA
- -
- - 1
- - 25 VDS=24V, VGS=0, TJ=70°C
- - 65
- - 90 VGS=4.5V, ID=2A
- 4.0 - S VDS=5V, ID=3.0A
Dynamic
Total Gate Charge2 Qg - 3.1 Gate-Source Charge Qgs - 1.2 Gate-Drain Charge Qgd - 1.6 Turn-on Delay Time2 T
Rise Time Tr - 2.5 Turn-off Delay Time T
Fall Time Tf - 1.7 -
- 3.3 -
d(on)
- 13.2 -
d(off)
±
100
Unit
nA VGS=±20V
VDS=30V, VGS=0
µA
VGS=10V, ID=3A
mΩ
VDS=25V,
nC
VGS=4.5V,
ID=3.0A
VDS=15V,
VGS=10V,
nS
R
RD=15Ω,
ID=1A
Teat Conditions
=3.3Ω,
GEN
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Reverse Transfer Capacitance Rg - 2.3 3.0 Ω f=1.0MHz
- 200 -
iss
- 40 -
oss
- 20 -
rss
VGS=0,VDS=25V,f=1.0MHz
pF
Source-Drain Diode
Diode Forward Voltage 2 VSD - - 1.2 V IS=0.9A, VGS=0V
Reverse Recovery Time TRR - 14 - ns
Reverse Recovery Charge QRR - 7.0 - nC
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test
3. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180℃/W when mounted on Min. copper pad.
IS=3.0A, VGS=0V
dI/dt=100A/µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT6802
3.3A , 30V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT6802
3.3A , 30V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 4 of 4
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