Page 1
TOP VIEW
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX.
K 0° 10°
E 1.90 REF.
L
0.95 REF.
F 0.30 0.50
B
L
F
HC
J
D G
K
A
E
1
2 3
4
5
6
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6602 uses advanced trench technology to
provide excellent on-resistance and low gate charge.
The complementary MOSFETs form a high-speed
power inverter, suitable for a multitude of applications.
The TSOP-6 package is universally used for all
commercial-industrial surface mount applications.
FEATURES
Low Gate Change
Low On-resistance
MARKING
6602
Date Code
STT6602
N-Ch: 3.3A, 30V, R
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
TSOP-6
REF.
DS(ON)
DS(ON)
REF.
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current 2
Pulsed Drain Current 1 IDM 10 -10 A
Power Dissipation @TA=25°C PD 1.14 W
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range TJ, T
Maximum Junction to Ambient 2 R
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in
2
copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad.
(TA=25°C unless otherwise specified)
Ratings
N-Channel
TA=25°C
ID
TA=70°C 2.6 -1.8
-55~150 °C
STG
Thermal Resistance Rating
JA
θ
110 °C / W
3.3 -2.3
P-Channel
Unit
A
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15-Aug-2011 Rev. A Page 1 of 7
Page 2
STT6602
N-Ch: 3.3A, 30V, R
Elektronische Bauelemente
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
DS(ON)
DS(ON)
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance 1
Total Gate Charge1
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time1
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Notes:
1. Pulse test
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 2 of 7
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
(TA=25°C unless otherwise specified)
Static
BV
V
I
I
R
DS(ON)
T
T
C
C
C
DSS
GS(th)
g
fs
GSS
DSS
Qg
Qgs
Qgd
d(on)
Tr
d(off)
Tf
iss
oss
rss
Rg
30 - -
-30 - - VGS=0, ID=-250µA
1 - 2.5
-1 - -2.5 VDS=VGS, ID= -250µA
- 4 -
- 2 - VDS= -5V, ID= -2A
- - ±100
- -
- - 1
- - -1 VDS= -30 V, VGS=0
- - 25 VDS=24V, VGS=0
- - -25 VDS= -24V, VGS=0
- - 65
- - 120 VGS= -10V, ID= -2A
- - 90 VGS=4.5V, ID=2A
- - 170 VGS= -4.5V, ID= -1A
- 3.1 -
- 3 -
- 1.2 -
- 0.78 -
- 1.6 -
- 1.6 -
- 3.3 -
- 7 -
- 2.5 -
- 6 -
- 13.2 -
- 15 -
- 1.7 -
- 7.5 -
- 200 -
- 260 -
- 40 -
- 55 -
- 20 -
- 44 -
- 2.3 3.0
- 4.3 5
±
100
Test Conditions
VGS=0, ID=250µA
V
VDS=VGS, ID=250µA
V
VDS=5V, ID=3A
S
VGS= ±20V
nA
VGS= ±20V
VDS=30 V, VGS=0
uA
VGS=10V, ID=3A
mΩ
N-Channel
VDS=25V, VGS= 4.5V, ID= 3A
nC
P-Channel
VDS= -25V, VGS= -4.5V, ID= -2.0A
N-Channel
VDS= 15V, RG= 3.3Ω,RD=15Ω
VGS= 10V, ID= 1A
nS
P-Channel
VDS= -15V, RG= 3.3Ω,RD=15Ω
VGS=-5V, ID= -1A
N-Channel
VGS=0, VDS=25V, f=1.0MHz
pF
P-Channel
VGS=0, VDS=-25V, f=1.0MHz
Ω f=1.0MHz
Page 3
STT6602
N-Ch: 3.3A, 30V, R
Elektronische Bauelemente
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
DS(ON)
DS(ON)
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Forward On Voltage1
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse test
N-Ch
P-Ch - - -1.2 IS= -0.9A, VGS=0
N-Ch
P-Ch - 15 - IS= -2A, VGS=0 ,dI/dt=100A/µs
N-Ch
P-Ch - 7 - IS= -2A, VGS=0 ,dI/dt=100A/µs
(TA=25°C unless otherwise specified)
Source-Drain Diode
V
SD
T
rr
Q
rr
- - 1.2
- 14 -
- 7 -
Test Conditions
IS=0.9A, VGS=0
V
IS=3A, VGS=0 ,dI/dt=100A/µs
ns
IS=3A, VGS=0 ,dI/dt=100A/µs
nC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 3 of 7
Page 4
STT6602
N-Ch: 3.3A, 30V, R
Elektronische Bauelemente
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 4 of 7
DS(ON)
DS(ON)
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
Page 5
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
STT6602
N-Ch: 3.3A, 30V, R
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
DS(ON)
DS(ON)
65 mΩ
120 mΩΩΩΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 5 of 7
Page 6
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
STT6602
N-Ch: 3.3A, 30V, R
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
DS(ON)
DS(ON)
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 6 of 7
Page 7
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
STT6602
N-Ch: 3.3A, 30V, R
P-Ch: -2.3A, -30V, R
N & P-Channel Enhancement Mode Mos.FET
DS(ON)
DS(ON)
65 mΩ
Ω
ΩΩ
120 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 7 of 7
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