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STT5PF20V
P-CHANNEL 20V - 0.065Ω -5ASOT23-6L
2.5V-DRIVE STripFET™ II POWER M OSF ET
TYPE V
STT5PF20V 20 V
■ TYPICAL R
■ TYPICAL R
■ ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
■ STANDARD OUTLINE FOR EASY
DSS
(on) = 0.065Ω (@4.5V)
DS
(on) = 0.085Ω (@2.5V)
DS
R
DS(on)
< 0.080 Ω (@4.5V)
<0.10Ω (@2.5V)
I
D
5A
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Po wer MOSFET is the latest dev elopment of
STMicroelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance.
APPLICATIONS
■ MOBILE PHONE APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENTIN NOMADIC
EQUIPMENT
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STT5PF20V STPN SOT23-6L TAPE & REEL
1/8October 2003
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STT5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
() Pulsewidthlimitedbysafeoperatingarea
Note: For the P -CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max 78 °C/W
T
j
T
stg
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
20 V
20 V
Gate- source Voltage ± 8 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 20 A
Total Dissipation at TC= 25°C
5A
3.1 A
1.6 W
Max. Operating Junction Temperature 150 °C
Storage Temperature –55 to 150 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
J
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µA,VGS= 0 20 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 8V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
VGS= 4.5V, ID= 2.5 A
= 2.5V, ID= 2.5 A
V
GS
= 250µA
0.45 V
0.065 0.080 Ω
0.085 0.10 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 2.5 A 6.6 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 179 pF
Reverse Transfer
Capacitance
V
= 15 V, f = 1 MHz, VGS=0
DS
412 pF
42.5 pF
2/8
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STT5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 47 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Source-drain Current 5 A
Source-drain Current (pulsed) 20 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=10V,ID= 2.5 A
DD
= 4.7Ω VGS=2.5V
R
G
(see test circuit, Figure 1)
=10V,ID=5A,
V
DD
V
= 2.5V
GS
(see test circuit, Figure 2)
VDD=10V,ID=2.5A,
RG=4.7Ω, VGS= 2.5 V
(see test circuit, Figure 1)
ISD= 5 A, VGS=0
= 5 A, di/dt = 100A/µs,
I
SD
VDD=16V,Tj= 150°C
(see test circuit, Figure 3)
11 ns
4.5
0.73
1.75
38
20
1.2 V
32
12.8
0.8
nC
nC
nC
ns
ns
ns
nC
A
3/8
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STT5PF20V
Safe Operating Area
Output Characteristics Transfer Characteristics
Thermal Impeden ce Junction-PCB
Transconductance
4/8
Static Drain-source On Resistance
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STT5PF20V
Gate Charge vs Gate-so urce Voltage
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance Variations
Source-drain Diode Forward Characteristics
5/8
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STT5PF20V
Fig. 1: Switching Times Test Circuit For
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
6/8
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TSOP-6 MECHANICAL DATA
STT5PF20V
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 0.035 0.057
A1 0.00 0.15 0.000 0.006
A2 0.90 1.30 0.035 0.051
b 0.25 0.50 0.010 0.020
C 0.09 0.20 0.004 0.008
D 2.80 3.10 0.110 0.122
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.35 0.55 0.014 0.022
e 0.95 0.037
e1 1.90 0.075
mm mils
AA2
A1
b
e
c
L
E
e1
D
E1
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STT5PF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility fo r the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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