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STT4PF20V
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.090 Ω - 3A SO T23-6L
2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE
STT4PF20V 20 V
■ TYPICAL R
■ TYPICAL R
■ ULTRA LOW THRESHOLD
V
DSS
(on) = 0.090 Ω @ 4.5 V
DS
(on) = 0.100 Ω @ 2.7 V
DS
R
DS(on)
< 0.11 Ω ( @ 4.5 V )
< 0.135 Ω ( @ 2.7 V )
I
3 A
D
GATE DRIVE (2.7 V)
■ STANDARD OUTLI NE FO R EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ MOBILE PHONE APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 10 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 12 A
Total Dissipation at TC = 25°C
current has to be reversed
20 V
20 V
3A
1.9 A
1.6 W
1/8May 2003
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Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
STT4PF20V
THERMA L D ATA
Rthj-amb
T
T
stg
(*)
When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
(*)
Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
j
storage temperature
Max 78
150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 10V
GS
20 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 4.5 V ID = 1.5 A
V
GS
V
= 2.7 V ID = 1.5 A
GS
= 250 µA
D
0.6 V
0.090
0.100
0.110
0.135
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=15V ID=1.5 A
DS
= 15V, f = 1 MHz, VGS = 0
V
DS
6.5 S
500
140
30
µA
µA
Ω
Ω
pF
pF
pF
2/8
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Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
STT4PF20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 10 V ID = 1.5 A
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
= 10V ID= 3A VGS=4.5V
V
DD
(see test circuit, Figure 2)
38
39
5.8
1
1.4
7.8 nC
ns
ns
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
54
12
= 10 V ID = 1.5 A
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulse wi dth [ 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by T
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
JMAX
I
= 3 A VGS = 0
SD
= 3 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(Inductive Load, Figure 3)
Thermal Impedance
3
12
1.2 V
20
13
1.3
ns
ns
A
A
ns
nC
A
3/8
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STT4PF20V
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
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STT4PF20V
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature
. .
5/8
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STT4PF20V
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
6/8
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SOT23-6L MECHANICAL DATA
STT4PF20V
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 0.035 0.057
A1 0.00 0.15 0.000 0.006
A2 0.90 1.30 0.035 0.051
b 0.25 0.50 0.010 0.020
C 0.09 0.20 0.004 0.008
D 2.80 3.10 0.110 0.122
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.35 0.55 0.014 0.022
e 0.95 0.037
e1 1.90 0.075
mm mils
AA2
A1
b
e
c
L
E
e1
D
E1
7/8
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STT4PF20V
Information furnishe d is bel i eved to be accurate and reliable. However, STM icroelectro ni cs assumes no responsibility for t he consequ ences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of S T M i croelectr onics. Spec i fications mentioned in this publ ic at ion ar e subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems wi thout express written ap proval of STMicroelectro nics.
The ST log o i s registered trademark of STM i croelect ronics
2003 STMi croelectr oni cs - All Rights Reserved
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All other names are the property of their respec tive owners.
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