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STT4443
-2.3A , -30V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DS(ON)
120 m
DESCRIPTION
STT4443 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
MARKING
4443
Date Code
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
TSOP-6
A
E
L
5
6
4
B
1
23
F
D G
Millimeter Millimete
REF.
Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
K
REF.
TOP VIEW
HC
J
Min. Max.
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current
Power Dissipation TA=25°C P
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range T
Maximum Junction to Ambient 3 R
1
IDM -10 A
=25°C unless otherwise specified)
A
TA=25°C -2.3
=70°C
T
A
D
-1.8
1.14 W
D
, T
-55~150 °C
j
stg
A
I
Thermal Resistance Rating
110 °C / W
JA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2011 Rev. B Page 1 of 4
Page 2
STT4443
-2.3A , -30V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
DS(ON)
120 m
ELECTRICAL CHARACTERISTICS (T
Parameter
=25°C unless otherwise specified)
A
Symbol Min. Typ. Max.
Unit Teat Conditions
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 2 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
-30 - - V VGS=0, ID= -250uA
-1 - -2.5 V VDS=VGS, ID= -250uA
- - ±100 nA VGS=±20V
- - -1 VDS= -30V, VGS=0
μA
- - -25
VDS= -24V, VGS=0
- - 120 VGS= -10V, ID= -2A
- - 170
mΩ
V
GS
- 4 - S VDS= -5V, ID= -2A
Dynamic
Total Gate Charge2 Q
Gate-Source Charge Qgs - 0.78 -
Gate-Drain Charge Q
Turn-on Delay Time2 T
Rise Time Tr - 6 -
Turn-off Delay Time T
Fall Time Tf - 7.5 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Reverse Transfer Capacitance Rg - 4.3 5 Ω f=1.0MHz
- 3 -
g
- 1.6 -
gd
- 7 -
d(on)
- 15 -
d(off)
- 260 -
iss
- 55 -
oss
- 44 -
rss
nC
nS
pF
V
DS
V
GS
I
= -2A
D
V
DS
V
GS
R
=3.3Ω,
G
R
=15Ω,
D
I
= -1A
D
V
GS
V
DS
f=1.0MHz
= -4.5V, ID= -1A
= -25V,
= -4.5V,
= -15V,
= -5V,
=0,
= -25V,
Source-Drain Diode
Diode Forward Voltage 2 V
Reverse Recovery Time2 T
Reverse Recovery Charge QRR - 7 - nC
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test
3. Surface mounted on 1 in
2
copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.
- - -1.2 V IS= -0.9A, VGS=0
SD
- 15 - ns
RR
= -2A, VGS=0
I
S
dI/dt=100A/μs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT4443
P-Channel Enhancement Mode MOSFET
-2.3A , -30V , R
DS(ON)
120 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT4443
P-Channel Enhancement Mode MOSFET
-2.3A , -30V , R
DS(ON)
120 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2011 Rev. B Page 4 of 4
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