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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
Dual N-Ch Enhancement Mode Mos.FET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low R
and to ensure minimal power
DS(on)
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low R
life.
Low thermal impedance copper leadframe TSOP-6 saves
board space.
Fast switching speed.
High performance trench technology.
provide higher efficiency and extends battery
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
V
(V) R
DS
20
(on) (m I
DS
58@V
= 4.5V 3.7
GS
82@VGS= 2.5V
(A)
D
3.1
G
S
G
STT3998N
3.7 A, 20 V, R
D G
D
S
D
58 m
DS(ON)
TSOP-6
A
E
L
5
6
4
B
1
23
F
K
Millimeter
REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
REF.
Millimete
HC
J
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
= 25°C
T
Continuous Drain Current a
Pulsed Drain Current
b
I
A
TA= 70°C 2.9
Continuous Source Current (Diode Conduction) a I
Power Dissipation a
TA= 25°C
TA= 70°C 0.7
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
20 V
DS
±12 V
GS
ID
8 A
DM
1.05 A
S
P
D
Ratings
Maximum
3.7
1.15
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ. Max. Unit
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State 130 150
R
JA
93 110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Unit
A
W
°C / W
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
= 25°C unless otherwise specified)
A
Dual N-Ch Enhancement Mode Mos.FET
STT3998N
3.7 A, 20 V, R
DS(ON)
58 m
Gate-Threshold Voltage V
Gate-Body Leakage I
GS(th)
GSS
0.7 - - V VDS=VGS, ID= 250uA
- - 1 uA VDS= 0V, VGS= 12V
- - 0.1
Zero Gate Voltage Drain Current I
DSS
- - 1
On-State Drain Current a I
30 - - A V
D(on)
- - 58
Drain-Source On-Resistance a R
DS(ON)
- - 82 VGS= 2.5V, ID= 2.7A
Forward Transconductance a g
Diode Forward Voltage a V
fs
- 0.8 - V IS= 1.05A, VGS= 0V
SD
- 10 - S VDS= 10V, ID= 6.8A
DYNAMIC
b
Total Gate Charge Qg - 7.5 -
Gate-Source Charge Qgs - 0.6 -
Gate-Drain Charge Q
- 1.0 -
gd
VDS= 16V, VGS= 0V
uA
= 16V, VGS= 0V, T
V
DS
DS =
= 4.5V, ID= 3.7A
V
GS
mΩ
= 10V, VGS= 4.5V,
V
nC
DS
I
= 3.7A
D
5V, VGS= 4.5V
= 55°C
J
Turn-on Delay Time T
- 5 -
d(on)
Rise Time Tr - 12 -
Turn-off Delay Time T
- 13 -
d(off)
Fall Time Tf - 7 -
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
nS
= 10V, VGS= 4.5V,
V
DD
R
= 15, ID= 1A
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A Page 2 of 2
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