Datasheet stt3981 Datasheet

STT3981

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.

FEATURES

z Low On-Resistance z Low Gate Charge

PACKAGE DIMENSIONS

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

REF.

A A1 A2

c

D

E E1

Millimeter Millimeter

Min. Max.

1.10 Max

0 0.10

0.70 1.00

0.12 Ref

2.70 3.10

2.60 3.00

1.40 1.80

REF.

L

L1

b e

e1

Min. Max.

0.45 Ref

0.60 Ref

0° 10°

0.30 0.50

0.95 Ref

1.90 Ref

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit

Drain-Source Voltage V

-20 V

DS

Gate-Source Voltage VGS ±8 V

I

@TA=25℃

Continuous Drain Current3

Pulsed Drain Current1 I Power Dissipation PD @T

D

@TA=70℃

I

D

-8 A

DM

=25℃ 0.8 W

A

-1.6

-1.3

A

Linear Derating Factor 0.006 W/℃ Operating Junction and Storage Temperature Range TJ, T

-55 ~ +150 ℃

STG

THERMAL DATA

Parameter Symbol Ratings Unit

Thermal Resistance Junction-ambient3 (Max) R

150 ℃/W

θJA

10-Feb-2010 Rev. C Page 1 of 5

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

= 25°C unless otherwise specified)

A

STT3981

Parameter Symbol Min Typ

Max Unit Test Conditions

Static

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Gate Leakage Current I

Drain-Source Leakage Current (Tj=25℃)

Drain-Source Leakage Current (Tj=70℃)

GS(th)

GSS

I

DSS

-20 - - V V

DSS

-0.4 - -1.1 V V

- - ±100 nA V

- - -1 V uA

- - -20

- 100 150 V

Drain-Source On-Resistance R

DS(ON)

- 160 210 V

mΩ

- 260 300

Forward Transconductance gfs - 4 - S

Diode Forward Voltage2 V

- -0.84 -1.1 V

SD

Dynamic

Total Gate Charge2

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Turn-on Delay Time2

Rise Time

Turn-off Time

Fall Time

T

Q

gs

Q

gd

d(on)

T

d(off)

T

g

r

f

- 6 7.5

- 0.52 -

- 1.02 -

- 50 65

- 40 60

- 168 180

- 64 75

nC

nS

Input Capacitance Ciss - 450 -

Output Capacitance Coss - 60 -

pF

Reverse Transfer Capacitance Crss - 47 -

Notes: 1. Pulse width limited by maximum junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1 in

2

copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.

= 0, ID=250 uA

GS

= VGS, ID=250 uA

DS

= ±8 V

GS

= -20 V, V

DS

V

= -16 V, V

DS

= -4.5 V, ID = -1.9 A

GS

= -2.5 V, ID = -1.6 A

GS

V

= -1.8 V, ID = -0.7 A

GS

= -5V, ID = -1.9A

V

DS

= -1.0A, V

I

S

I

= -1.9 A

D

= -10 V

V

DS

= -4.5 V

V

GS

= -10 V

V

DS

= -1 A

I

D

V

GEN

= 6 Ω

R

G

= 10 Ω

R

L

V

= 0 V

GS

= -15 V

V

DS

= -4.5 V

GS

f = 1.0 MHz

= 0

GS

= 0

GS

= 0V

010-Feb-2010 Rev. C Page 2 of 5

Elektronische Bauelemente

CHARACTERISTIC CURVES

8

7

6

5

Output Characteristics Transfer Characteristics

VGS = 5 thru 3 V

2.5 V

STT3981

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

8

7

6

5

TC = 55-C

25 C

125 C

4

Drain Current (A)-

3

D

I

2

1

0

012345

VDS Drain-to-Source Voltage (V)

2 V

1.5 V

On-Resistance vs. Drain Current

0.6

0.5

)

0.4

0.3

On-Resistance (

-

0.2

DS(on)

r

0.1

0.0 01234567

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

ID Drain Current (A)

Gate Charg e

6

5

V

DS

I

D

=10V

=1.9A

4

Drain Current (A)I

3

D

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

--

VGS Gate-to-Source Voltage (V)

400

350

300

250

200

150

C Capacitance (pF)

100

50

C

rss

0

048121620

VDS Drain-to-Source Voltage (V)

Capacitance

--

C

iss

C

oss

On-Resistance vs. Junction Temperatur e

1.6

VGS = 4.5 V I

= 1.9 A

1.4

D

4

u

3

2

1

VGS - Gate-to -So rce Vo ltag e (V)

0

01234567

Qg - Total Gate Charge (nC)

1.2

-

On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

-

50 25 0 25 50 75 100 125 150

-

Junction Temperature ( C)

T

J

10-Feb-2010 Rev. C Page 3 of 5

STT3981

Elektronische Bauelemente

10

Source Current (A)I

-

S

Source-Drain Diode Forward Voltage

TJ = 150 C

1

TJ = 25 C

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

On-Resistance vs. Gate-to-Source Voltage

0.5

0.4

)

ID = 1.9 A

On-Resistance (r

-

DS(on)

0.3

0.2

0.1

0.00 0.3 0.6 0.9

VSD Source-to-Drain Voltage (V)

Threshold Voltage

0.3

0.2

0.1

Variance (V)V

0.0

GS(th)

-

0.1

-

0.2

--

50 25 0 25 50 75 100 125 150

ID = 250 A

T-

Temperature ( C)

J

1.2 1.5

Safe Operating Area, Junction-to-Case

100

0.0 0123456

--

VGS Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

25

20

15

Power (W)

10

5

0

0.001

0.1

Time (sec)

1

100.01

I

DM

DSS

Limited

1 ms

10 ms

100 ms

10 s, 1 s dc

r

Limited

DS(on)

10

1

I

Drain Current (A)I

-

D

0.1

0.01

D(on)

Limited

TC = 25 C

Single Pulse

BV

0.1 1 10 100

VDS Drain-to-Source Voltage (V)

-

10-Feb-2010 Rev. C Page 4 of 5

STT3981

Elektronische Bauelemente

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.2

0.1

0.05

0.02

Single Pulse

4-- - -

3

10

2

10

Square Wave Pulse Duration (sec)

1

Normalized Thermal Transient Impedance, Junction-to-Foot

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Notes:

P

DM

t

1

t

2

t

thJA

t

(t)

100

1

2

= 132 C/W

1. Duty Cycle, D =

2. Per Unit Base = R

TA = PDMZ

3. T

-

JM

4. Surface Mounted

1 10 60010

Single Pulse

0.01

4-- - -

10

3

10

2

10

Square Wave Pulse Duration (sec)

1

110

10

10-Feb-2010 Rev. C Page 5 of 5