Page 1
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX.
K 0° 10°
E 1.90 REF.
L
0.95 REF.
F 0.30 0.50
B
L
F
HC
J
D G
K
A
E
1
2 3
4
5
6
G1
S2
G2
D1
S2
D2
STT3962NE
2.3A , 60V , R
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
N-Channel Enhancement Mode MOSFET
DS(ON)
0.153 Ω
ΩΩΩ
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and extends
DS(on)
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
ESD
Protection Diode
2KV
REF.
TSOP-6
REF.
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 8 A
Continuous Source Current (Diode Conduction) 1 IS 1.05 A
Power Dissipation 1
Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C
Maximum Junction to Ambient 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
4-Aug-2011 Rev. A Page 1 of 2
2. Pulse width limited by maximum junction temperature.
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C 1.9
TA=25°C
PD
TA=70°C 0.7
Thermal Resistance Rating
t ≦ 10 sec
Steady State 166
R
JA
θ
2.3
1.15
100
A
W
°C / W
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
STT3962NE
2.3A , 60V , R
N-Channel Enhancement Mode MOSFET
(TA=25°C unless otherwise specified)
DS(ON)
0.153 Ω
ΩΩΩ
Parameter
Symbol Min. Typ. Max.
Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage 1 VSD - 0.8 - V IS=1.05A, VGS=0
GS(th)
- - 100 uA VDS=0, VGS=20V
GSS
DSS
5 - - A V
D(on)
DS(ON)
fs
1 - - V VDS=VGS, ID=250uA
- - 1
- - 10 VDS=48V, VGS=0, TJ=55°C
- - 0.153
- - 0.185
- 10 - S VDS=5V, ID=2.3A
VDS=48V, VGS=0
uA
VGS=10V, ID=2.3A
Ω
VGS=4.5V, ID=2.1A
Dynamic 2
Total Gate Charge Qg - 3 Gate-Source Charge Qgs - 0.6 Gate-Drain Charge Qgd - 1 Turn-on Delay Time T
Rise Time Tr - 12 Turn-off Delay Time T
Fall Time Tf - 7 -
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 5 -
d(on)
- 13 -
d(off)
nC
nS
VDS=15V,
VGS=4.5V,
ID=2.3A
VDD=15V,
VGS=4.5V,
R
ID=1A
Teat Conditions
=5V, VGS=10V
DS
=15Ω,
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
4-Aug-2011 Rev. A Page 2 of 2
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