Page 1
G
G
S S
D
D
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX.
K 0° 10°
E 1.90 REF.
L
0.95 REF.
F 0.30 0.50
B
L
F
HC
J
D G
K
A
E
1
2 3
4
5
6
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low on-resistance
Low drive current
Low R
Fast switching speed
High performance trench technology
DS(on)
Provides Higher Efficiency and Extends Battery Life
STT3922N
4.1A, 20V, R
N-Channel Enhancement Mode Power MOSFET
REF.
DS(ON)
TSOP-6
47mΩ
Ω
ΩΩ
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 8 A
Continuous Source Current (Diode Conduction) 1 IS 1.05 A
Power Dissipation 1
Operating Junction and Storage Temperature Range TJ, T
(TA=25°C unless otherwise specified)
TA= 25°C
TA= 70°C 3.3
TA= 25°C
TA= 70°C 0.7
Thermal Resistance Rating
ID
PD
-55~150 °C
STG
4.1
1.15
A
W
Maximum Junction to Ambient 1
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2012 Rev. A Page 1 of 2
R
θJA
t 10 sec≦
110
150
°C / W
Page 2
STT3922N
4.1A, 20V, R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
47mΩ
Ω
ΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.8 - V IS=1.05A, VGS=0
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
0.4 - - V VDS=VGS, ID=250µA
- - 1 µA VDS=0, VGS=8V
- - 0.1
- - 1 VDS=16V, VGS=0, TJ= 55°C
30 - - A V
- - 47
- - 55 VGS=2.5V, ID=3.8A
- 10 - S VDS=10V, ID=4.1A
VDS=16V, VGS=0
µA
VGS=4.5V, ID=4.1A
mΩ
Dynamic 2
Total Gate Charge Qg - 7.5 Gate-Source Charge Qgs - 0.6 Gate-Drain Charge Qgd - 1 Turn-on Delay Time T
Rise Time Tr - 12 Turn-off Delay Time T
Fall Time Tf - 7 -
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 5 -
d(on)
- 13 -
d(off)
nC
nS
VDS=10V,
VGS=4.5V,
ID=4.1A
VDD=10V,
VGS=4.5V,
ID=1A,
R
Test Conditions
=5V, VGS=4.5V
DS
=15Ω
GNE
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
22-Jun-2012 Rev. A Page 2 of 2
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