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STT3810N
6A , 20V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DS(ON)
24.5 m
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
T ypical Applications:
Battery Powered Instruments
Portable Computing
Mobile Phones
Fast switch
GPS Units and Media Players
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
TSOP-6
A
E
L
5
6
4
B
1
23
F
D G
Millimeter Millimete
REF.
Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
K
REF.
Min. Max.
HC
J
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain Current 1
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range T
Maximum Junction to Ambient 1
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
2
IDM 20 A
=25°C unless otherwise noted)
A
T
= 25°C 6
A
= 100°C
T
A
T
= 25°C 0.83
A
= 100°C
T
A
J
Thermal Resistance Ratings
t≦10 sec 110
Steady State
I
D
A
3.6
1 A
S
P
D
W
0.3
, T
-55 ~ 150 °C
STG
R
θJA
°C / W
150
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
13-Aug-2012 Rev. A Page 1 of 4
Page 2
STT3810N
6A , 20V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate- Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current I
Drain-Source On-Resistance R
Forward Transconductance g
Diode Forward Voltage VSD - 0.7 - V IS=1A, VGS=0V
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
0.5 - 1 V VDS=VGS, ID=250μA
- - ±100 nA VDS=0, VGS= ±10V
- - 1 VDS=16V, VGS=0 V
- - 30
10 - - A V
- - 24.5 VGS=4.5V, ID=6A
- - 38
- 10 - S VDS=10V, ID=6A
μA
V
mΩ
V
Dynamic
Total Gate Charge Qg - 12.5 -
Gate-Source Charge Qgs - 0.7 -
Gate-Drain Charge Q
Turn-on Delay Time T
Rise Time Tr - 14 -
Turn-off Delay Time T
Fall Time Tf - 5 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
- 4.3 -
gd
- 5 -
d(on)
- 30 -
d(off)
Ciss
Coss
Crss
- 700 -
- 125 -
- 110 -
nC
nS
pF
V
V
I
V
V
R
R
I
VDS=10V,
V
f =1MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
13-Aug-2012 Rev. A Page 2 of 4
24.5 m
DS(ON)
=16V, VGS=0 V, T
DS
=5V, VGS=10V
DS
=2.5V, ID=5A
GS
=10V,
DS
=4.5V,
GS
=5.4A
D
=10V,
DD
=4.5V,
GEN
=6Ω,
GEN
=10Ω,
L
=1A
D
=0,
GS
= 85°C
J
Page 3
Elektronische Bauelemente
Electrical Characteristics
STT3810N
N-Channel Enhancement Mode Mos.FET
6A , 20V , R
DS(ON)
24.5 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
13-Aug-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
Typical Electrical Characteristics
STT3810N
N-Channel Enhancement Mode Mos.FET
6A , 20V , R
DS(ON)
24.5 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
13-Aug-2012 Rev. A Page 4 of 4
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