Datasheet stt3599c Datasheet

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STT3599C

(N-Ch) 3.7 A, 30 V, R

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R

and to ensure minimal power

DS(on)

loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R  Low thermal impedance copper leadframe TSOP-6 saves board space.  Fast switching speed.  High performance trench technology.

provides higher efficiency and extends battery life.

DS(on)

F

D G

REF.

PRODUCT SUMMARY

V

(V) R

DS

30

-30

0.090@VGS= 4.5V

0.112@V

0.172@VGS= -4.5V -2.2

(on) ( I

DS

0.063@V

= 10V 3.7

GS

= -10V

GS

D1 S1 D2

6

4

5



2

1 3

G1 S2 G2

(A)

D

3.1

-2.7



Gate



Drain



Gate



Source

ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED)

Parameter Symbol

Drain-Source Voltage V Gate-Source Voltage V

Continuous Drain Current a

Pulsed Drain Current

b

I

Continuous Source Current (Diode Conduction) a I

Power Dissipation a

ID @TA=25℃ I

@TA=70℃

D

P

@TA=25℃ 1.15

D

P

@TA=70℃ 0.7

D

30 -30 V

DS

±20 ±20 V

GS

8 -8 A

DM

1.05 -1.05 A

S

N-Channel P-Channel

Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃

Ratings

3.7 -2.7

2.9 -2.1

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction to Ambient

t ≦ 10 sec

a

Steady State 130 150 130 150

RJA

N-Channel P-Channel

Typ Max Typ Max

93 110 93 110

Notes

DS(ON) DS(ON)

TSOP-6

A E

L

B

Millimeter

Min. Max. Min. Max.

A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50



Drain



Source

63 m

112 m

K

Millimete

REF.

HC J

Unit

A

W

Unit

℃ / W

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 1 of 7

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Min. Typ. Max. Unit Test Conditions

(N-Ch) 3.7 A, 30 V, R

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

= 25°C unless otherwise specified)

A

STT3599C

DS(ON) DS(ON)

63 m

112 m

Gate-Threshold Voltage

Gate-Body Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current a

Drain-Source

On-Resistance

a

Forward Transconductance

N-Ch

V

P-Ch -1 -1.6 -2.5 VDS=VGS, ID= -250uA

GS(th)

N-Ch

I

P-Ch - -4.5nA -100 VDS= 0 V, VGS= -20 V

GSS

N-Ch

1 1.6 2.5

- 4.5nA 100

- 12nA 1

VDS=VGS, ID=250uA

V

= 0 V, VGS= 20 V

uA

DS

VDS=24 V, VGS=0 V

P-Ch - -12nA -1 VDS=-24V, VGS=0 V

I

N-Ch - - 10 VDS=24V, VGS=0 V, TJ=55℃

DSS

uA

P-Ch - - -10 VDS= -24V, VGS=0 V, TJ=55℃

N-Ch

I

P-Ch -5 - - V

D(on)

N-Ch

5 - -

- 0.057 0.063

V

5V, VGS=10 V

A

DS =

= -5V, VGS= -10 V

DS

VGS=10V, ID= 3.7A

P-Ch - 0.100 0.112 VGS=-10V, ID= -2.7A

R

N-Ch - 0.075 0.090 VGS=4.5V, ID= 3.1A

DS(ON)

Ω

P-Ch - 0.148 0.172 VGS=-4.5V, ID= -2.2A

N-Ch

a

P-Ch - 5 - VDS= -5V, ID= 3.1A

g

fs

- 10 -

VDS= 5V, ID= 3.7A

S

Diode Forward Voltage a

N-Ch

VSD

- 0.80 S

I

= 1.05A, VGS= 0V

S

P-Ch - -0.83 - IS= -1.05A, VGS= 0V

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 2 of 7

STT3599C

(N-Ch) 3.7 A, 30 V, R

Elektronische Bauelemente

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DYNAMIC

b

DS(ON) DS(ON)

63 m

112 m

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

N-Ch

Qg

P-Ch - 3.8 8

N-Ch

Qgs

P-Ch - 0.6 2

N-Ch

Q

P-Ch - 1.5 3

gd

N-Ch

C

P-Ch - 378 800

iss

N-Ch

C

P-Ch - 126 300

oss

N-Ch

C

P-Ch - 52 300

rss

N-Ch

T

P-Ch - 5 10

d(on)

- 2.2 5

- 0.5 1

- 0.8 2

- 184 400

- 62 200

- 30 200

- 5 10

nC

pF

N-Channel V

DS

I

= 2.7A

D

P-Channel V

DS

I

= -3.1A

D

N-Channel V

DS

f= 1MHz

P-Channel V

DS

f= 1MHz

N-Channel

N-Ch

Tr

P-Ch - 15 30

N-Ch

T

P-Ch - 20 40

d(off)

N-Ch

- 12 30

- 13 30

- 7 20

nS

V

DD

V

GS

P-Channel V

DD

V

GS

Tf

P-Ch - 20 40

=15V, VGS= 4.5V,

= -15V, VGS= -4.5V,

= 15V, VGS= 0V,

= -15V, VGS= 0V,

= 15V, R

GEN

= 15 ,　

= 4.5V, ID= 1A

= -15V, R

GEN

= 15　

= -4.5V, ID= -1A

Notes

a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

b. Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 3 of 7

Elektronische Bauelemente

CHARACTERISTIC CURVES (N-Channel)

STT3599C

(N-Ch) 3.7 A, 30 V, R

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

63 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 4 of 7

STT3599C

(N-Ch) 3.7 A, 30 V, R

Elektronische Bauelemente

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

63 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 5 of 7

Elektronische Bauelemente

CHARACTERISTIC CURVES (P-Channel)

STT3599C

(N-Ch) 3.7 A, 30 V, R

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

63 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 6 of 7

STT3599C

(N-Ch) 3.7 A, 30 V, R

Elektronische Bauelemente

(P-Ch) -2.7 A, -30 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

63 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jul-2010 Rev. A Page 7 of 7

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