Datasheet stt3520c Datasheet

r

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize high cell density process. Low R

assures minimal power loss and conserves

DS(on)

energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R

Battery Life.

 Miniature TSOP-6 Surface Mount Package Saves

Board Space.

Provides Higher Efficiency And Extends

DS(on)

PACKAGE INFORMATION

Package MPQ LeaderSize

TSOP-6 3K 7’ inch

STT3520C

N-Ch: 3.7 A, 23 V, R

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

A E

F

D G

Millimeter

REF.

Min. Max. Min. Max.

A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50

58 m

DS(ON)

112 m

DS(ON)

TSOP-6

L

B

K

REF.

Millimete

HC

J

G1

1

S2

G2

2

3

ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED)

Parameter Symbol

Drain-Source Voltage V Gate-Source Voltage V

Continuous Drain Current 1

Pulsed Drain Current

2

I

Continuous Source Current (Diode Conduction) 1 I

Power Dissipation 1

ID @TA=25℃ I

@TA=70℃

D

P

@TA=25℃ 1.15

D

P

@TA=70℃ 0.7

D

23 -23 V

DS

±12 ±12 V

GS

8 -8 A

DM

1.05 -1.05 A

S

N-Channel P-Channel

Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃

Ratings

3.7 -2.7

2.9 -2.1

6

5

4

Unit

A

W

D1

S1

D2

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 1 of 7

Elektronische Bauelemente

Parameter Symbol

t ≦ 10 sec

Maximum Junction to Ambient

1

Steady State 130 150 130 150

Notes

1 Surface Mounted on 1” x 1” FR4 Board.

2 Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS

Parameter Symbol Min. Typ. Max. Unit Test Conditions

N-Ch: 3.7 A, 23 V, R

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

THERMAL RESISTANCE RATINGS

N-Channel P-Channel

Typ Max Typ Max

RJA

(TA = 25°C unless otherwise specified)

93 110 93 110

STT3520C

DS(ON) DS(ON)

58 m

112 m

Unit

℃ / W

Gate-Threshold Voltage

Gate-Body Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current 1

Drain-Source

On-Resistance

1

N-Ch

V

P-Ch -1 - - VDS=VGS, ID= -250uA

GS(th)

N-Ch

I

P-Ch - - -100 VDS= 0 V, VGS= -12 V

GSS

N-Ch

1 - -

- - 100

- - 1

VDS=VGS, ID=250uA

V

= 0 V, VGS= 12 V

uA

DS

VDS=16 V, VGS=0 V

P-Ch - - -1 VDS=-16V, VGS=0 V

I

N-Ch - - 10

DSS

P-Ch - - -10

N-Ch

I

P-Ch -5 - - V

D(on)

N-Ch

5 - -

- - 58

uA

=16V, VGS=0 V, TJ=55℃

V

DS

= -16V, VGS=0 V, TJ=55℃

V

DS

V

5V, VGS=4.5 V

A

DS =

= -5V, VGS= -4.5 V

DS

VGS=4.5V, ID= 3.7A

P-Ch - - 112 VGS=-4.5V, ID= 3.1A

N-Ch - - 82 VGS=2.5V, ID= 2.7A

R

P-Ch - - 172 VGS=-2.5V, ID= -2.2A

DS(ON)

mΩ

N-Ch - - 160 VGS=1.8V, ID= 2.2A

P-Ch - - 210 VGS=-1.8V, ID= -2.0A

Forward Transconductance

Diode Forward Voltage 1

N-Ch

1

P-Ch - 5 - VDS= -5V, ID= 3.1A

g

fs

N-Ch

VSD

- 10 -

- 0.80 -

VDS= 5V, ID= 3.7A

S

I

= 1.05A, VGS= 0V

S

P-Ch - -0.83 - IS= -1.05A, VGS= 0V

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 2 of 7

STT3520C

N-Ch: 3.7 A, 23 V, R

Elektronische Bauelemente

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

DYNAMIC

2

DS(ON) DS(ON)

58 m

112 m

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Notes

1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

N-Ch

Qg

P-Ch - 3.8 -

N-Ch

Qgs

P-Ch - 0.6 -

N-Ch

Q

P-Ch - 1.5 -

gd

N-Ch

T

P-Ch - 5 -

d(on)

- 7.5 -

- 0.6 -

- 1.0 -

- 5 -

nC

N-Channel V

DS

I

= 2.7A

D

P-Channel V

DS

I

= -3.1A

D

N-Channel

N-Ch

Tr

P-Ch - 15 -

N-Ch

T

P-Ch - 20 -

d(off)

N-Ch

- 12 -

- 13 -

- 7 -

nS

V

DD

V

GS

P-Channel V

DD

V

GS

Tf

P-Ch - 20 -

=15V, VGS= 4.5V,

= -15V, VGS= -4.5V,

= 15V, R

GEN

= 15Ω,

= 4.5V, ID= 1A

= -15V, R

GEN

= 15Ω

= -4.5V, ID= -1A

2 Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 3 of 7

Elektronische Bauelemente

CHARACTERISTIC CURVES (N-Channel)

STT3520C

N-Ch: 3.7 A, 23 V, R

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

58 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 4 of 7

STT3520C

N-Ch: 3.7 A, 23 V, R

Elektronische Bauelemente

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

58 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 5 of 7

Elektronische Bauelemente

CHARACTERISTIC CURVES (P-Channel)

STT3520C

N-Ch: 3.7 A, 23 V, R

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

58 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 6 of 7

STT3520C

N-Ch: 3.7 A, 23 V, R

Elektronische Bauelemente

P-Ch: -2.7 A, -23 V, R

N & P-Channel Enhancement Mode Mos.FET

DS(ON) DS(ON)

58 m

112 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

02-Dec-2010 Rev. A Page 7 of 7

Datasheet stt3520c Datasheet [en, de]