Page 1
r
Elektronische Bauelemente
KEY FEATURE S
Low R
Low thermal impedance.
Fast switching speed.
trench technology.
DS(on)
TYPICAL APPLICATIONS
White LED boost converters.
Automotive Systems
Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
PRODUCT SUMMARY
V
(V) R
DS
150
(on) (m I
DS
700@V
= 10V 1.2
GS
1200@VGS= 4.5V
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
(A)
D
N-Channel Enhancement Mode Mos.FET
1
D
D
G
STT3490N
1.2 A, 150 V, R
F
D G
REF.
D
D
S
700 m
DS(ON)
TSOP-6
A
E
L
5
6
4
B
1
23
K
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
REF.
Millimete
HC
J
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25°C
Continuous Drain Current a
Pulsed Drain Current
b
I
A
TA= 70°C 1
Continuous Source Current (Diode Conduction) a I
= 25°C
T
Power Dissipation a
A
TA= 70°C 1.3
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
150 V
DS
±20 V
GS
ID
±10 A
DM
2.5 A
S
P
D
Ratings
Maximum
1.2
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Maximum Unit
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State 110
R
JA
62.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Unit
A
W
°C / W
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. B Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
= 25°C unless otherwise specified)
A
N-Channel Enhancement Mode Mos.FET
STT3490N
1.2 A, 150 V, R
DS(ON)
700 m
Gate-Threshold Voltage V
Gate-Body Leakage I
GS(th)
- - ±100 uA VDS= 0V, VGS= ±20V
GSS
1 - 3.5 V VDS=VGS, ID= 250uA
- - 1
Zero Gate Voltage Drain Current I
DSS
- - 10
On-State Drain Current a I
10 - - A V
D(on)
- - 700
Drain-Source On-Resistance a R
DS(ON)
- - 1200 VGS= 4.5V, ID= 1A
Forward Transconductance a g
Diode Forward Voltage a V
fs
- 0.8 - V IS= 1.25A, VGS= 0V
SD
- 11 - S VDS= 15V, ID= 1.2A
DYNAMIC
b
Total Gate Charge Qg - 2.5 -
Gate-Source Charge Qgs - 1 -
Gate-Drain Charge Q
- 0.8 -
gd
VDS= 120V, VGS= 0V
uA
= 120V, VGS= 0V, T
V
DS
5V, VGS= 10V
DS =
= 10V, ID= 1.2A
V
GS
mΩ
= 10V, VGS= 4.5V,
V
nC
DS
I
D
= 1A
= 55°C
J
Turn-on Delay Time T
Rise Time Tr - 5 -
Turn-off Delay Time T
- 5 -
d(on)
- 6 -
d(off)
nS
= 10V, V
V
DD
R
= 10, ID= 1A, R
L
GEN
= 10V,
GEN
= 6
Fall Time Tf - 4 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
- 320 -
iss
- 37 -
oss
- 20 -
rss
pF
= 15V, VGS= 0V,
V
DS
f= 1MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3490N
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, R
DS(ON)
700 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3490N
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, R
DS(ON)
700 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. B Page 4 of 4
Loading...